STT49GKxxB
Thyristor-Thyristor Modules
500
W
400
3
.
STT49B
3
.
STD49B
500
W
400
w
3
. 0.1 0.08 0.06 0.04
0 .16
0 .18
0.2
0.25
0.3
0.4
0.5
0.6
0.8
1
1.5
R
th(c-a)
64
T
c
74
84
94
104
114
O
300
B
6
300
0.35
200
200
100
Pvtot
0
0 I
D
I
RMS
100
Pvtot
K/W
0
124
C
50
100
A
150
0
T
a
50
100
O
Fig.4L Power dissipation of three modules vs. direct and rms current
Fig.4R Power dissipation of three modules vs. case temp
C
150
1000
uC
1/2
1/2
.
STT49B
.
STD49B
1.2
K/W
I
TM=
100A
50A
20A
10A
5A
5
0.8
1/2
1/2
.
STT49B
.
STD49B
Zth(j-s)
Zth(j-c)
100
0.4
Qrr
10
0
Tvj=125 C
o
Zth
0
0.001
t
0.01
0.1
1
10
s 100
-di
T
/dt
10
A/us 100
Fig.5 Recovered charge vs. current decrease
Fig.6 Transient thermal impedance vs. time
250
A
1/2
1/2
.
STT49B
200
.
STD49B
typ.
max.
2
I
T(OV)
I
TSM
1.6
1.4
1.2
1/2
1/2
.
STT 49B
.
STD 49B
I
TSM(25 C) =1000A
I
TSM(125 C)=850A
O
O
150
100
1
0.8
_
.
0.5
.
V
1
.
V
0 V
RRM
RRM
RRM
50
I
T
0
0
Vt 0.5
1
1.5
Tvj=25
O
C
O
－ －
Tvj=125 C
2
V 2.5
0.6
0.4
Fig.7 On-state charactristics
1
Fig.8 Surge overload current vs. time
t
10
100
ms 1000
SIRECT [ Sirectifier Global Corp. ]
