BTB/BTA06
Discrete Triacs(Non-Isolated/Isolated)
Dimensions TO-220AB
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Inches
Min.
Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100
BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Milimeter
Min.
Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54
4.08
5.85
6.85
2.54
3.18
1.15
1.65
2.79
5.84
0.64
1.01
2.54
BSC
4.32
4.82
1.14
1.39
0.35
0.56
2.29
2.79
G
T2
T1
T2
G
T1
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current (full sine wave)
TO-22 0AB
Tc = 100 °C
6
A
I
TSM
I
²
t
dI/dt
I
GM
P
G(AV)
T
stg
T
j
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I
²
t Value for
fusing
Critical rate of rise of on-state current
_
I
G
= 2 x
I
GT
, tr < 100 ns
Peak gate current
Average gate p ower diss ipation
Storage junction temperature range
Operating junction temperature
range
F = 60 Hz
F = 50 Hz
t = 16.7 ms
t = 20 ms
63
60
21
A
A
²
s
A/µs
A
W
°C
tp = 10 ms
F = 120 Hz
tp = 20 µs
Tj = 125°C
Tj = 125°C
Tj = 125°C
50
4
1
- 40 to + 150
- 40 to + 125
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
s
SNUBBERLESS™ and LOGIC LEVEL(3 Quadrants)
Symbol
Test Conditions
Quadrant
CW
I
GT
(1)
V
GT
V
GD
I
H
(2)
I
L
dV/dt (2)
V
D
= 12 V
V
D
= V
DRM
I
T
= 100 mA
I
G
= 1.2 I
GT
V
D
= 67 % V
DRM
gate open Tj = 125°C
Tj = 125°C
I - III
II
MIN.
MIN.
(dI/dt)c (2) Without snubber
R
L
= 30
Ω
R
L
= 3.3 k
Ω
Tj = 125°C
I - II - III
I - II - III
I - II - III
MAX.
MAX.
MIN.
MAX.
MAX.
35
50
60
400
3.5
35
1.3
0.2
50
70
80
1000
5.3
V/µs
A/ms
BTA/BTB
BW
50
mA
V
V
mA
mA
Unit
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
