MBR1070CT thru MBR10100CT
Wide Temperature Range and High T
jm
Schottky Barrier Rectifiers
A
C(TAB)
A
C
A
C
A
Dimensions TO-220AB
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Inches
Min.
Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100
BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Milimeter
Min.
Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54
4.08
5.85
6.85
2.54
3.18
1.15
1.65
2.79
5.84
0.64
1.01
2.54
BSC
4.32
4.82
1.14
1.39
0.35
0.56
2.29
2.79
A=Anode, C=Cathode, TAB=Cathode
V
RRM
V
70
80
90
100
V
RMS
V
49
56
63
70
V
DC
V
70
80
90
100
MBR1070CT
MBR1080CT
MBR1090CT
MBR10100CT
Symbol
I
(AV)
I
FSM
dv/dt
Characteristics
Maximum Average Forward Rectified Current
@T
C
=100
o
C
Maximum Ratings
10
120
10000
I
F
=5A
I
F
=5A
I
F
=10A
I
F
=10A
@T
J
=25
o
C
@T
J
=125
o
C
@T
J
=25
o
C
@T
J
=125
o
C
@T
J
=25
o
C
@T
J
=125
o
C
0.85
0.75
0.95
0.85
0.1
15
3.0
300
-55 to +150
-55 to +175
Unit
A
A
V/us
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
Voltage Rate Of Change (Rated V
R
)
Maximum Forward
Voltage (Note 1)
V
F
V
I
R
R
OJC
C
J
T
J
T
STG
Maximum DC Reverse Current
At Rated DC Blocking Voltage
Typical Thermal Resistance (Note 2)
mA
o
C/W
pF
o
o
Typical Junction Capacitance Per Element (Note 3)
Operating Temperature Range
Storage Temperature Range
C
C
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
FEATURES
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low V
F
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
MECHANICAL DATA
* Case: TO-220AB molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
