MBR10150 thru MBR10200
Wide Temperature Range and High T
jm
Schottky Barrier Rectifiers
Dimensions TO-220AC
A
C(TAB)
A
C
C
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
Inches
Min.
Max.
0.500 0.580
0.560 0.650
0.380 0.420
0.139 0.161
2.300 0.420
0.100 0.135
0.045 0.070
-
0.250
0.025 0.035
0.190 0.210
0.140 0.190
0.015 0.022
0.080 0.115
0.025 0.055
Milimeter
Min.
Max.
12.70 14.73
14.23 16.51
9.66 10.66
3.54
4.08
5.85
6.85
2.54
3.42
1.15
1.77
-
6.35
0.64
0.89
4.83
5.33
3.56
4.82
0.38
0.56
2.04
2.49
0.64
1.39
A=Anode, C=Cathode, TAB=Cathode
V
RRM
V
150
200
V
RMS
V
105
140
V
DC
V
150
200
MBR10150
MBR10200
Symbol
I
FAV
I
FSM
I
AR
(dv/dt)
cr
T
VJ
T
VJM
T
stg
M
d
Weight
mounting torque
typical
Test Conditions
T
C
=125
o
C; rectangular, d=0.5
T
VJ
=45
o
C; t
p
=10ms (50Hz), sine
V
A
=1.5
.
V
RRM
typ.; f=10kHz; repetitive
Maximum Ratings
10
150
0.8
10000
-65...+150
150
-65...+175
0.4...0.6
2
Unit
A
A
A
V/us
o
C
Nm
g
Symbol
T
VJ
=25
o
C; V
R
=V
RRM
o
T
VJ
=125 C; V
R
=V
RRM
I
F
=10A; T
VJ
=125 C
I
F
=10A; T
VJ
=25
o
C
I
F
=20A; T
VJ
=125
o
C
I
F
=20A; T
VJ
=25
o
C
o
Test Conditions
Characteristic Values
typ.
max.
1.0
50
0.80
0.90
0.90
1.00
2.0
Unit
I
R
mA
V
F
V
R
thJC
K/W
FEATURES
* International standard package
* Very low V
F
* Extremely low switching losses
* Low I
RM
-values
APPLICATIONS
* Rectifiers in switch mode power
supplies (SMPS)
* Free wheeling diode in low voltage
converters
ADVANTAGES
* High reliability circuit operation
* Low voltage peaks for reduced
protection circuits
* Low noise switching
* Low losses
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
