MBR1030CT thru MBR1045CT
Wide Temperature Range and High T
jm
Schottky Barrier Rectifiers
A
C(TAB)
A
C
A
C
A
Dimensions TO-220AB
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Inches
Min.
Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100
BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Milimeter
Min.
Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54
4.08
5.85
6.85
2.54
3.18
1.15
1.65
2.79
5.84
0.64
1.01
2.54
BSC
4.32
4.82
1.14
1.39
0.35
0.56
2.29
2.79
A=Anode, C=Cathode, TAB=Cathode
V
RRM
V
30
35
40
45
V
RMS
V
21
24.5
28
31.5
V
DC
V
30
35
40
45
MBR1030CT
MBR1035CT
MBR1040CT
MBR1045CT
Symbol
I
(AV)
I
FSM
dv/dt
V
F
Characteristics
Maximum Average Forward Rectified Current
@T
C
=105
o
C
Maximum Ratings
10
125
10000
I
F
=5A @T
J
=25
o
C
I
F
=5A @T
J
=125
o
C
I
F
=10A @T
J
=125
o
C
@T
J
=25
o
C
@T
J
=125
o
C
0.57
0.70
0.84
0.1
15
3.0
170
-55 to +150
-55 to +175
Unit
A
A
V/us
V
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
Voltage Rate Of Change (Rated V
R
)
Maximum Forward
Voltage (Note 1)
Maximum DC Reverse Current
At Rated DC Blocking Voltage
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance Per Element (Note 3)
Operating Temperature Range
Storage Temperature Range
I
R
R
OJC
C
J
T
J
T
STG
mA
o
C/W
pF
o
o
C
C
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
FEATURES
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low V
F
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
MECHANICAL DATA
* Case: TO-220AB molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
