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MBR20200CT 参数 Datasheet PDF下载

MBR20200CT图片预览
型号: MBR20200CT
PDF下载: 下载PDF文件 查看货源
内容描述: 工作温度范围宽和高TJM肖特基势垒整流器 [Wide Temperature Range and High Tjm Schottky Barrier Rectifiers]
分类和应用: 二极管局域网
文件页数/大小: 2 页 / 193 K
品牌: SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
 浏览型号MBR20200CT的Datasheet PDF文件第2页  
MBR20150CT thru MBR20200CT
Wide Temperature Range and High T
jm
Schottky Barrier Rectifiers
A
A
C
A
C
A
Dimensions TO-220AB
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Millimeter
Min. Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54
4.08
5.85
6.85
2.54
3.18
1.15
1.65
2.79
5.84
0.64
1.01
2.54
BSC
4.32
4.82
1.14
1.39
0.38
0.56
2.29
2.79
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100
BSC
0.170 0.190
0.045 0.055
0.015 0.022
0.090 0.110
C(TAB)
A=Anode, C=Cathode, TAB=Cathode
V
RSM
V
150
200
V
RRM
V
150
200
Test Conditions
T
C
=125 C; rectangular, d=0.5
T
C
=125
o
C; rectangular, d=0.5; per device
T
VJ
=45
o
C; t
p
=10ms (50Hz), sine
V
A
=1.5
.
V
RRM
typ.; f=10kHz; repetitive
o
MBR20150CT
MBR20200CT
Symbol
I
FRMS
I
FAV
I
FAV
I
FSM
I
AR
(dv/dt)
cr
T
VJ
T
VJM
T
stg
M
d
Weight
Maximum Ratings
20
10
20
150
0.8
10000
-65...+150
150
-65...+175
Unit
A
A
A
V/us
o
C
mounting torque
typical
0.4...0.6
2
Nm
g
Symbol
T
VJ
=25
o
C; V
R
=V
RRM
T
VJ
=125
o
C; V
R
=V
RRM
I
F
=10A; T
VJ
=125
o
C
I
F
=10A; T
VJ
=25
o
C
I
F
=20A; T
VJ
=125
o
C
I
F
=20A; T
VJ
=25
o
C
Test Conditions
Characteristic Values
typ.
max.
1.0
50
0.80
0.90
0.90
1.00
2.0
Unit
I
R
mA
V
F
V
R
thJC
K/W
FEATURES
* International standard package
* Very low V
F
* Extremely low switching losses
* Low I
RM
-values
APPLICATIONS
* Rectifiers in switch mode power
supplies (SMPS)
* Free wheeling diode in low voltage
converters
ADVANTAGES
* High reliability circuit operation
* Low voltage peaks for reduced
protection circuits
* Low noise switching
* Low losses