MBR30100PT thru MBR30200PT
Wide Temperature Range and High T
jm
Schottky Barrier Rectifiers
A
C(TAB)
A
C
A
C
A
Dimensions TO-247AD
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
Millimeter
Min. Max.
19.81 20.32
20.80 21.46
15.75 16.26
3.55 3.65
4.32
5.4
1.65
-
1.0
10.8
4.7
0.4
1.5
5.49
6.2
2.13
4.5
1.4
11.0
5.3
0.8
2.49
Inches
Min.
Max.
0.780
0.819
0.610
0.140
0.170
0.212
0.065
-
0.040
0.426
0.185
0.016
0.087
0.800
0.845
0.640
0.144
0.216
0.244
0.084
0.177
0.055
0.433
0.209
0.031
0.102
A=Anode, C=Cathode, TAB=Cathode
V
RRM
V
100
150
200
V
RMS
V
70
105
140
V
DC
V
100
150
200
MBR30100PT
MBR30150PT
MBR30200PT
Symbol
I
(AV)
I
FSM
dv/dt
Characteristics
Maximum Average Forward Rectified Current
@T
C
=125
o
C
Maximum Ratings
30
250
10000
I
F
=15A
I
F
=15A
I
F
=30A
I
F
=30A
@T
J
=25
o
C
@T
J
=125
o
C
@T
J
=25
o
C
@T
J
=125
o
C
@T
J
=25
o
C
@T
J
=125
o
C
0.85
0.70
0.98
0.85
0.05
10
2.2
700
-55 to +150
-55 to +150
Unit
A
A
V/us
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
Voltage Rate Of Change (Rated V
R
)
Maximum Forward
Voltage (Note 1)
V
F
V
I
R
R
OJC
C
J
T
J
T
STG
Maximum DC Reverse Current
At Rated DC Blocking Voltage
Typical Thermal Resistance (Note 2)
mA
o
C/W
pF
o
o
Typical Junction Capacitance Per Element (Note 3)
Operating Temperature Range
Storage Temperature Range
C
C
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
FEATURES
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low V
F
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
MECHANICAL DATA
* Case: TO-247AD molded plastic
* Polarity: As marked on the body
* Weight: 0.2 ounces, 5.6 grams
* Mounting position: Any
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
