MBR40100PT
High T
jm
(+175
o
C) Schottky Barrier Diodes
10
8
15
7
A l ow C s Tm etu -(°)
l a le a e e p r C
b
ra e
10
7
15
6
D
C
10
6
15
5
10
5
0
A e a ePwr L s - (Wt ts
v r g o e os
a )
1
8
Rth C(D ) =1 5 C
C
.2 ° /W
J
D=0 8
.0
1 D=0 7
6
.1
D=0 5
.2
1
4
D=0 3
.3
D=0 0
.5
1
2
1
0
M im
8 R SL it
6
4
2
D
C
5
1
0
1
5
2
0
2
5
(A
)
3
0
0
0
5
1
0
1
5
2
0
2
5
3
0
A e g F rw rdC rre t - I
v ra e o a
u n
F V
(A )
A e g F rw rdC rre t - I
v ra e o a
u n
(A
)
F V
(A )
Fig. 5 - Max. Allowable Case Temperature
Vs. Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics
(Per Leg)
10000
At Any Rated Load Condition
And With Rated
RRM
Applied
V
Following Surge
FSM
Non-Repetitive Surge Current - I
(A)
1000
100
10
100
1000
10000
Square Wave Pulse Duration - t
p
(microsec)
Fig. 7 - Max. Non-Repetitive Surge Current (Per Leg)
L
HIGH-S
PEED
S CH
WIT
FREE-WHEEL
DIODE
40HF
L40S
02
+
DUT
IR P460
F
R = 25 ohm
g
Vd = 25 Volt
CURRENT
MONIT
OR
Fig. 8 - Unclamped Inductive Test Circuit
Sirectifier
R
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
