MUR6020PT, MUR6030PT
Ultra Fast Recovery Diodes
120
A
100
I
F
80
60
40
20
0
0.0
0.0
10
T
VJ
=150°C
T
VJ
=100°C
T
VJ
= 25°C
0.8
uC
Q
r
0.6
T
VJ
= 100°C
V
R
= 100V
30
T
VJ
= 100°C
A
V = 100V
R
25
I
RM
20
0.4
I
F
= 15A
I
F
= 35A
I
F
= 70A
I
F
= 15A
I
F
= 35A
I
F
= 70A
15
10
0.2
5
0
100
A/us 1000
-di
F
/dt
0
200
400
600 A/us 1000
800
-di
F
/dt
0.4
0.8
V
F
1.2 V
Fig. 1 Forward current I
F
versus V
F
Fig. 2 Typ. reverse recovery charge Q
r
versus -di
F
/dt
70
ns
60
t
rr
50
40
T
VJ
= 100°C
V
R
= 100V
Fig. 3 Typ. peak reverse current I
RM
versus -di
F
/dt
6
V
5
V
FR
4
3
t
fr
T
VJ
= 100°C
I
F
= 35A
V
FR
1.6
1.4
K
f
1.2
1.0
1.8
us
1.5
t
fr
1.2
0.9
0.6
0.3
0.0
A/us
800
30
0.8
0.6
0.4
0
40
80
120 °C 160
T
VJ
I
RM
Q
r
20
10
0
0
200
400
I
F
= 15A
I
F
= 35A
I
F
= 70A
2
1
0
600 A/us
800
-di
F
/dt
1000
0
200
400
600
di
F
/dt
Fig. 4 Dynamic parameters Q
r
, I
RM
versus T
VJ
1.2
K/W
1.0
0.8
Z
thJC
0.6
0.4
0.2
0.0
0.001
Fig. 5 Typ. recovery time t
rr
versus -di
F
/dt
Fig. 6 Typ. peak forward voltage
V
FR
and t
fr
versus di
F
/dt
0.01
0.1
1
t
s
10
Fig. 7 Transient thermal impedance junction to case
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
