S1PHB28
Single Phase Half Controlled Bridge With Free Wheeling Diode
Dimensions in mm (1mm=0.0394")
Type
V
RSM
V
DSM
V
900
1300
1500
1700
1900
V
RRM
V
DRM
V
800
1200
1400
1600
1800
2
1
6
4
3
S1PHB28-08
S1PHB28-12
S1PHB28-14
S1PHB28-16
S1PHB28-18
8
Symbol
I
dAV
T
K
=85
o
C, module
I
dAVM
module
I
FRMS
, I
TRMS
per leg
T
VJ
=45
o
C
V
R
=0
T
VJ
=T
VJM
V
R
=0
T
VJ
=45
o
C
V
R
=0
T
VJ
=T
VJM
V
R
=0
T
VJ
=125
o
C
f=50Hz, t
p
=200us
V
D
=2/3V
DRM
I
G
=0.3A
di
G
/dt=0.3A/us
Test Conditions
Maximum Ratings
28
32
23
Unit
A
I
TSM
, I
FSM
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
repetitive, I
T
=50A
300
330
270
300
440
455
365
370
150
A
I
2
t
A
2
s
(di/dt)
cr
A/us
non repetitive, I
T
=1/2I
dAV
500
1000
10
5
0.5
10
-40...+125
125
-40...+125
V/us
W
W
V
o
(dv/dt)
cr
P
GM
P
GAVM
V
RGM
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
T
VJ
=T
VJM
;
V
DR
=2/3V
DRM
R
GK
= ; method 1 (linear voltage rise)
T
VJ
=T
VJM
I
T
=I
TAVM
t
p
=30us
t
p
=500us
C
50/60Hz, RMS
_
I
ISOL
<1mA
t=1min
t=1s
3000
3600
2-2.5
18-22
50
V~
Nm
lb.in.
g
Mounting torque (M5)
(10-32 UNF)
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
