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SBL1650PT 参数 Datasheet PDF下载

SBL1650PT图片预览
型号: SBL1650PT
PDF下载: 下载PDF文件 查看货源
内容描述: 低VF肖特基整流器 [Low VF Schottky Barrier Rectifiers]
分类和应用:
文件页数/大小: 2 页 / 125 K
品牌: SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
 浏览型号SBL1650PT的Datasheet PDF文件第2页  
SBL1650PT thru SBL1660PT
Low V
F
Schottky Barrier Rectifiers
Dimensions TO-247AD
A
C(TAB)
A
C
A
C
A
Dim.
A
B
C
D
E
F
G
H
Millimeter
Min. Max.
19.81 20.32
20.80 21.46
15.75 16.26
3.55 3.65
4.32
5.4
1.65
-
1.0
10.8
4.7
0.4
1.5
5.49
6.2
2.13
4.5
1.4
11.0
5.3
0.8
2.49
Inches
Min.
Max.
0.780
0.819
0.610
0.140
0.170
0.212
0.065
-
0.040
0.426
0.185
0.016
0.087
0.800
0.845
0.640
0.144
0.216
0.244
0.084
0.177
0.055
0.433
0.209
0.031
0.102
A=Anode, C=Cathode, TAB=Cathode
SBL1650PT
SBL1660PT
V
RRM
V
50
60
V
RMS
V
35
42
V
DC
V
50
60
J
K
L
M
N
Symbol
I
(AV)
I
FSM
V
F
I
R
C
J
R
OJC
T
J
T
STG
Characteristics
Maximum Average Forward Rectified Current
@T
C
=95
o
C
Maximum Ratings
16
250
0.70
@T
J
=25
o
C
@T
J
=100
o
C
0.5
50
500
3.5
-55 to +125
-55 to +150
Unit
A
A
V
mA
pF
o
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
Maximum Forward Voltage At 8A DC (Note 3)
Maximum DC Reverse Current
At Rated DC Blocking Voltage
Typical Junction Capacitance Per Element (Note 1)
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
C/W
o
o
C
C
NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
2. Thermal Resistance Junction To Case.
3. 300us Pulse Width, 2% Duty Cycle.
FEATURES
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low V
F
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
MECHANICAL DATA
* Case: TO-247AD molded plastic
* Polarity: As marked on the body
* Weight: 0.2 ounces, 5.6 grams
* Mounting position: Any