SBL4050PT thru SBL4060PT
Low V
F
Schottky Barrier Rectifiers
Dimensions TO-247AD
A
C(TAB)
A
C
A
C
A
Dim.
A
B
C
D
E
F
G
H
Millimeter
Min. Max.
19.81 20.32
20.80 21.46
15.75 16.26
3.55 3.65
4.32
5.4
1.65
-
1.0
10.8
4.7
0.4
1.5
5.49
6.2
2.13
4.5
1.4
11.0
5.3
0.8
2.49
Inches
Min.
Max.
0.780
0.819
0.610
0.140
0.170
0.212
0.065
-
0.040
0.426
0.185
0.016
0.087
0.800
0.845
0.640
0.144
0.216
0.244
0.084
0.177
0.055
0.433
0.209
0.031
0.102
A=Anode, C=Cathode, TAB=Cathode
SBL4050PT
SBL4060PT
V
RRM
V
50
60
V
RMS
V
35
42
V
DC
V
50
60
J
K
L
M
N
Symbol
I
(AV)
I
FSM
V
F
I
R
C
J
R
OJC
T
J
T
STG
Characteristics
Maximum Average Forward Rectified Current
@T
C
=100
o
C
Maximum Ratings
40
375
0.70
10
100
800
1.4
-55 to +125
-55 to +150
Unit
A
A
V
mA
pF
o
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
Maximum Forward Voltage At 20A DC
Maximum DC Reverse Current
At Rated DC Blocking Voltage
@T
J
=25
o
C
@T
J
=25
o
C
@T
J
=100
o
C
Typical Junction Capacitance Per Element (Note 1)
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
C/W
o
o
C
C
NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
2. Thermal Resistance Junction To Case.
FEATURES
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low V
F
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
MECHANICAL DATA
* Case: TO-247AD molded plastic
* Polarity: As marked on the body
* Weight: 0.2 ounces, 5.6 grams
* Mounting position: Any
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
