SG200N06S
Discrete IGBTs
E
C
Dimensions SOT-227(ISOTOP)
Dim.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min.
Max.
31.50
7.80
4.09
4.09
4.09
14.91
30.12
37.80
11.68
8.92
0.76
12.60
25.15
1.98
4.95
26.54
3.94
4.72
24.59
-0.05
3.30
0.780
31.88
8.20
4.29
4.29
4.29
15.11
30.30
38.20
12.22
9.60
0.84
12.85
25.42
2.13
5.97
26.90
4.42
4.85
25.07
0.1
4.57
0.830
Inches
Min.
Max.
1.240
0.307
0.161
0.161
0.161
0.587
1.186
1.489
0.460
0.351
0.030
0.496
0.990
0.078
0.195
1.045
0.155
0.186
0.968
-0.002
0.130
19.81
1.255
0.323
0.169
0.169
0.169
0.595
1.193
1.505
0.481
0.378
0.033
0.506
1.001
0.084
0.235
1.059
0.174
0.191
0.987
0.004
0.180
21.08
E
G
L
M
N
O
P
Q
G=Gate, C=Collector, E=Emitter
R
S
T
U
V
W
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
Test Conditions
T
J
=25
o
C to 150
o
C
T
J
=25
o
C to 150
o
C; R
GE
=1 M ;
Continuous
Transient
T
C
=25
o
C
T
C
=90
o
C
T
C
=25
o
C, 1 ms
Maximum Ratings
600
600
±20
±30
200
100
300
I
CM
=100
@ 0.8 V
CES
600
-55...+150
150
-55...+150
Unit
V
V
A
A
W
o
V
GE
=15V; T
VJ
=125
o
C; R
G
=22
(RBSOA)
Clamped inductive load, L=30uH
P
C
T
C
=25
o
C
T
J
T
JM
T
stg
V
ISOL
M
d
Weight
50/60Hz
I
ISOL
1 mA
t =1 min
t =1 s
C
2500
3000
1.5/13
1.5/13
30
V~
Nm/Ib.in.
g
Mounting torque
Terminal connection torque(M4)
(T
J
=25
o
C,
unless otherwise specified)
Symbol
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
Test Conditions
I
C
=250uA; V
GE
=0V
I
C
=10mA; V
CE
=V
GE
V
CE
=0.8V
CES
;
V
GE
=0V;
T
J
=25
C
T
J
=125
o
C
o
Characteristic Values
min.
600
2.5
6
200
2
±400
2.5
typ.
max.
Unit
V
V
uA
mA
nA
V
V
CE
=0V; V
GE
=±20V
I
C
=I
C90
; V
GE
=15V
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
