SMOS44/48N50D2, SMOS44/48N50D3
Power MOSFETs
Dimensions SOT-227(ISOTOP)
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
Millimeter
Min.
Max.
31.50
7.80
4.09
4.09
4.09
14.91
30.12
37.80
11.68
8.92
0.76
12.60
25.15
1.98
4.95
26.54
3.94
4.72
24.59
-0.05
3.30
0.780
31.88
8.20
4.29
4.29
4.29
15.11
30.30
38.20
12.22
9.60
0.84
12.85
25.42
2.13
5.97
26.90
4.42
4.85
25.07
0.1
4.57
0.830
Inches
Min.
Max.
1.240
0.307
0.161
0.161
0.161
0.587
1.186
1.489
0.460
0.351
0.030
0.496
0.990
0.078
0.195
1.045
0.155
0.186
0.968
-0.002
0.130
19.81
1.255
0.323
0.169
0.169
0.169
0.595
1.193
1.505
0.481
0.378
0.033
0.506
1.001
0.084
0.235
1.059
0.174
0.191
0.987
0.004
0.180
21.08
Symbol
V
DSS
V
DGR
V
GS
HiPerFET MOSFET
Test Conditions
T
J
=25
o
C
to 150
o
C
T
J
=25
o
C
to 150
o
C;
R
GS
=1M
Continuous
Transient
T
C
=25
o
C
T
C
=25
o
C;pulse
width limited by max. T
JM
T
C
=25
o
C
Repetitive
I
S
T
J
I
DM
; -di/dt
100A/us; V
DD
V
DSS'
150
o
C;
R
G
=2
44N50
48N50
44N50
48N50
Maximum Ratings
500
500
±20
±30
44
48
176
192
24
30
5
520
600
60
800
180
-40…+150
150
-40…+150
Unit
V
V
A
A
A
mJ
V/ns
W
V
A
A
W
o
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
P
D
V
RRM
T
C
=25
o
C
T
C
=70
o
C;
rectangular; d=0.5
t
p
<10us;
pulse width limited by T
J
T
C
=25
o
C
DIODE
I
FAVM
I
FRM
P
D
T
J
T
JM
T
stg
C
CASE
V
ISOL
M
d
Weight
50/60 Hz, RMS
I
ISOL
1 mA
Mounting torque
t=1 min
t=1 s
2500
3000
1.5/13
1.5/13
30
V~
Nm/Ib.in.
g
Terminal connection torque(M4)
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
