SMOS44N80
Power MOSFETs
S
D
Dimensions SOT-227(ISOTOP)
Dim.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min.
Max.
31.50
7.80
4.09
4.09
4.09
14.91
30.12
37.80
11.68
8.92
0.76
12.60
25.15
1.98
4.95
26.54
3.94
4.72
24.59
-0.05
3.30
0.780
31.88
8.20
4.29
4.29
4.29
15.11
30.30
38.20
12.22
9.60
0.84
12.85
25.42
2.13
5.97
26.90
4.42
4.85
25.07
0.1
4.57
0.830
Inches
Min.
Max.
1.240
0.307
0.161
0.161
0.161
0.587
1.186
1.489
0.460
0.351
0.030
0.496
0.990
0.078
0.195
1.045
0.155
0.186
0.968
-0.002
0.130
19.81
1.255
0.323
0.169
0.169
0.169
0.595
1.193
1.505
0.481
0.378
0.033
0.506
1.001
0.084
0.235
1.059
0.174
0.191
0.987
0.004
0.180
21.08
S
G
L
M
N
O
P
Q
G=Gate, D=Drain,S=Source
R
S
T
U
V
W
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
T
J
=25
o
C
to 150
o
C
Test Conditions
Maximum Ratings
800
800
±20
±30
44
176
44
64
Unit
V
T
J
=25
o
C
to 150
o
C;
R
GS
=1M
Continuous
Transient
T
C
=25
o
C; Chip capability
T
C
=25
o
C;
pulse width limited by T
JM
T
C
=25
o
C
T
C
=25
o
C
I
S
T
J
I
DM
; di/dt
100A/us; V
DD
V
DSS'
150
o
C;
R
G
=2
V
A
A
A
mJ
V/ns
5
P
D
T
J
T
JM
T
stg
E
AS
V
ISOL
T
C
=25
o
C
700
-55...+150
150
-55...+150
W
o
C
T
C
=25
o
C
50/60Hz,RMS
I
ISOL
1mA
t=1 min
t=1 s
4
2500
3000
1.5/13
1.5/13
30
J
V~
M
d
Mounting torque
Terminal connection torque
Nm/Ib.in.
g
Weight
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
