STD/SDT130
Thyristor-Diode Modules, Diode-Thyristor Modules
Symbol
Test Conditions
Characteristic Values
Unit
TVJ=TVJM; VR=VRRM; VD=VDRM
IT, IF=300A; TVJ=25oC
For power-loss calculations only (TVJ=125oC)
10
1.36
0.8
mA
V
IRRM, IDRM
VT, VF
VTO
V
1.5
m
rT
VD=6V;
TVJ=25oC
TVJ=-40oC
2.5
2.6
V
VGT
IGT
VD=6V;
TVJ=25oC
150
200
mA
TVJ=-40oC
TVJ=TVJM;
VD=2/3VDRM
0.2
10
V
VGD
IGD
mA
TVJ=25oC; tp=30us; VD=6V
IG=0.5A; diG/dt=0.5A/us
TVJ=25oC; VD=6V; RGK=
TVJ=25oC; VD=1/2VDRM
IG=0.5A; diG/dt=0.5A/us
IL
IH
300
200
2
mA
mA
us
tgd
TVJ=TVJM; IT=160A; tp=200us; -di/dt=10A/us
VR=100V; dv/dt=20V/us; VD=2/3VDRM
typ.
150
us
tq
TVJ=TVJM; IT, IF=300A; -di/dt=50A/us
550
235
uC
A
QS
IRM
per thyristor/diode; DC current
per module
0.23
0.115
K/W
K/W
RthJC
RthJK
per thyristor/diode; DC current
per module
0.33
0.165
Creeping distance on surface
Strike distance through air
12.7
9.6
50
mm
mm
m/s2
dS
dA
a
Maximum allowable acceleration
FEATURES
APPLICATIONS
* Motor control
* Power converter
ADVANTAGES
* Space and weight savings
* Simple mounting
* International standard package
* Copper
base plate
* Planar passivated chips
* Isolation voltage 3600 V~
* Heat and temperature control for
industrial furnaces and chemical
processes
* Improved temperature and power
cycling
* Reduced protection circuits
* Lighting control
* Contactless switches
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
