STPR1010CT thru STPR1020CT
Ultra Fast Recovery Diodes
Dimensions TO-220AB
A
C(TAB)
A
C
A
C
A
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
A=Anode, C=Cathode, TAB=Cathode
STPR1010CT
STPR1020CT
V
RRM
V
100
200
V
RMS
V
70
140
V
DC
V
100
200
Inches
Min.
Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100
BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Milimeter
Min.
Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54
4.08
5.85
6.85
2.54
3.18
1.15
1.65
2.79
5.84
0.64
1.01
2.54
BSC
4.32
4.82
1.14
1.39
0.35
0.56
2.29
2.79
Symbol
I
(AV)
I
FSM
Characteristics
Maximum Average Forward Rectified Current
Non Repetitive Peak Forward Surge Current
Per Diode Sinusoidal (JEDEC METHOD)
Maximum Forward Voltage
Pulse Width=300us
Duty Cycle
Maximum DC Reverse Current
At Rated DC Blocking Voltage
I
F
=5A
I
F
=5A
I
F
=10A
I
F
=10A
@T
C
=125
o
C
T
P
=10ms
T
P
=8.3ms
@T
J
=25
o
C
@T
J
=125
o
C
@T
J
=25
o
C
@T
J
=125
o
C
@T
J
=25
o
C
@T
J
=100
o
C
Maximum Ratings
10
50
55
0.975
0.925
1.25
1.20
5
100
80
30
4.0
-55 to +150
Unit
A
A
V
F
V
I
R
C
J
T
RR
R
OJC
uA
pF
ns
o
Typical Junction Capacitance Per Element (Note 1)
Maximum Reverse Recovery Time (Note 2)
Typical Thermal Resistance
C/W
o
T
J
, T
STG
Operating And Storage Temperature Range
NOTES: 1. Measured at 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
2. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A.
C
FEATURES
* Glass passivated chip
* Superfast switching time for high efficiency
* Low forward voltage drop and high current capability
* Low reverse leakage current
* High surge capacity
MECHANICAL DATA
* Case: TO-220AB molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
