STPR2010CT thru STPR2020CT
Ultra Fast Recovery Diodes
Dimensions TO-220AB
A
C(TAB)
A
C
A
C
A
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
A=Anode, C=Cathode, TAB=Cathode
STPR2010CT
STPR2020CT
V
RRM
V
100
200
V
RMS
V
70
140
V
DC
V
100
200
Inches
Min.
Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100
BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Milimeter
Min.
Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54
4.08
5.85
6.85
2.54
3.18
1.15
1.65
2.79
5.84
0.64
1.01
2.54
BSC
4.32
4.82
1.14
1.39
0.35
0.56
2.29
2.79
Symbol
I
(AV)
I
FSM
Characteristics
Maximum Average Forward Rectified Current
@T
C
=95
o
C
Maximum Ratings
20
125
1.1
1.0
1.25
1.20
5
100
100
35
1.5
-55 to +150
Unit
A
A
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
Maximum Forward Voltage At
Pulse Width=300us
2% Duty Cycle
Maximum DC Reverse Current
At Rated DC Blocking Voltage
I
F
=10A
I
F
=10A
I
F
=20A
I
F
=20A
@T
J
=25
o
C
@T
J
=125
o
C
@T
J
=25
o
C
@T
J
=125
o
C
@T
J
=25
o
C
@T
J
=100
o
C
V
F
V
I
R
C
J
T
RR
R
OJC
uA
pF
ns
o
Typical Junction Capacitance Per Element (Note 1)
Maximum Reverse Recovery Time (Note 2)
Typical Thermal Resistance (Note 3)
C/W
o
T
J
, T
STG
Operating And Storage Temperature Range
NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
2. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A.
3. Thermal Resistance Junction To Case.
C
FEATURES
* Glass passivated chip
* Superfast switching time for high efficiency
* Low forward voltage drop and high current capability
* Low reverse leakage current
* High surge capacity
MECHANICAL DATA
* Case: TO-220AB molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
