STPR805DB thru STPR820DB
Ultra Fast Recovery Diodes
Dimensions TO-220AC
A
C(TAB)
A
C
C
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
A=Anode, C=Cathode, TAB=Cathode
V
RRM
V
50
100
150
200
V
RMS
V
35
70
105
140
V
DC
V
50
100
150
200
STPR805DB
STPR810DB
STPR815DB
STPR820DB
Inches
Min.
Max.
0.500 0.580
0.560 0.650
0.380 0.420
0.139 0.161
2.300 0.420
0.100 0.135
0.045 0.070
-
0.250
0.025 0.035
0.190 0.210
0.140 0.190
0.015 0.022
0.080 0.115
0.025 0.055
Milimeter
Min.
Max.
12.70 14.73
14.23 16.51
9.66 10.66
3.54
4.08
5.85
6.85
2.54
3.42
1.15
1.77
-
6.35
0.64
0.89
4.83
5.33
3.56
4.82
0.38
0.56
2.04
2.49
0.64
1.39
Symbol
I
(AV)
I
FSM
V
F
I
R
C
J
T
RR
R
OJC
Characteristics
Maximum Average Forward Rectified Current
@T
C
=125
o
C
Maximum Ratings
8.0
100
1.3
0.8
10
500
45
25
3.0
-55 to +150
Unit
A
A
V
uA
pF
ns
o
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
Maximum Forward
Voltage
I
F
=8A
Maximum DC Reverse Current
At Peak Reverse Voltage
Typical Junction Capacitance (Note 1)
Maximum Reverse Recovery Time (Note 2)
Typical Thermal Resistance (Note 3)
@T
J
=25
o
C
@T
J
=150
o
C
@T
J
=25
o
C
@T
J
=100
o
C
C/W
o
T
J
, T
STG
Operating And Storage Temperature Range
NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
2. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A.
3. Thermal Resistance Junction To Case.
C
FEATURES
* Glass passivated chip
* Superfast switching time for high efficiency
* Low forward voltage drop and high current capability
* Low reverse leakage current
* High surge capacity
MECHANICAL DATA
* Case: TO-220AC molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
