STPRF1605CT thru STPRF1620CT
Ultra Fast Recovery Diodes
Dimensions TO-220AB
A
C(TAB)
A
C
A
C
A
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
A=Anode, C=Cathode, TAB=Cathode
V
RRM
V
50
100
150
200
V
RMS
V
35
70
105
140
V
DC
V
50
100
150
200
STPRF1605CT
STPRF1610CT
STPRF1615CT
STPRF1620CT
Inches
Min.
Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100
BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Milimeter
Min.
Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54
4.08
5.85
6.85
2.54
3.18
1.15
1.65
2.79
5.84
0.64
1.01
2.54
BSC
4.32
4.82
1.14
1.39
0.35
0.56
2.29
2.79
Symbol
I
(AV)
I
FSM
V
F
I
R
C
J
T
RR
R
OJC
Characteristics
Maximum Average Forward Rectified Current
@T
C
=100
o
C
Maximum Ratings
16
125
0.95
@T
J
=25
o
C
@T
J
=100
o
C
5
500
110
35
1.5
-55 to +150
Unit
A
A
V
uA
pF
ns
o
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
Maximum Forward Voltage At 8.0A DC
Maximum DC Reverse Current
At Rated DC Blocking Voltage
Typical Junction Capacitance Per Element (Note 1)
Maximum Reverse Recovery Time (Note 2)
Typical Thermal Resistance (Note 3)
C/W
o
T
J
, T
STG
Operating And Storage Temperature Range
NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
2. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A.
3. Thermal Resistance Junction To Case.
C
FEATURES
* Glass passivated chip
* Superfast switching time for high efficiency
* Low forward voltage drop and high current capability
* Low reverse leakage current
* High surge capacity
MECHANICAL DATA
* Case: TO-220AB molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
