STT181
Thyristor-Thyristor Modules
Dimensions in mm (1mm=0.0394")
Type
V
RSM
V
DSM
V
900
1300
1500
1700
1900
V
RRM
V
DRM
V
800
1200
1400
1600
1800
STT181GK08
STT181GK12
STT181GK14
STT181GK16
STT181GK18
Symbol
I
TRMS
, I
FRMS
T
VJ
=T
VJM
I
TAVM
, I
FAVM
T
C
=85
o
C; 180
o
sine
T
VJ
=45
o
C
V
R
=0
T
VJ
=T
VJM
V
R
=0
T
VJ
=45
o
C
V
R
=0
T
VJ
=T
VJM
V
R
=0
T
VJ
=T
VJM
f=50Hz, t
p
=200us
V
D
=2/3V
DRM
I
G
=0.5A
di
G
/dt=0.5A/us
Test Conditions
Maximum Ratings
300
181
Unit
A
I
TSM
, I
FSM
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
repetitive, I
T
=500A
6000
6400
5250
5600
180000
170000
137000
128000
150
A
i
2
dt
A
2
s
(di/dt)
cr
A/us
non repetitive, I
T
=500A
500
1000
120
60
8
10
-40...+125
125
-40...+125
V/us
W
W
V
o
(dv/dt)
cr
P
GM
P
GAV
V
RGM
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
T
VJ
=T
VJM
;
V
DR
=2/3V
DRM
R
GK
= ; method 1 (linear voltage rise)
T
VJ
=T
VJM
I
T
=I
TAVM
t
p
=30us
t
p
=500us
C
50/60Hz, RMS
_
I
ISOL
<1mA
t=1min
t=1s
3000
3600
2.25-2.75/20-25
4.5-5.5/40-48
125
V~
Nm/lb.in.
g
Mounting torque (M6)
Terminal connection torque (M6)
Typical including screws
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
