STT320
Thyristor-Thyristor Modules
Symbol
I
RRM
I
DRM
V
T
, V
F
V
TO
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
Q
S
I
RM
R
thJC
R
thJK
d
S
d
A
a
per thyristor/diode; DC current
per module
per thyristor/diode; DC current
per module
Creeping distance on surface
Strike distance through air
Maximum allowable acceleration
T
VJ
=25
o
C; t
p
=30us; V
D
=6V
I
G
=0.45A; di
G
/dt=0.45A/us
T
VJ
=25
o
C; V
D
=6V; R
GK
=
T
VJ
=25
o
C; V
D
=1/2V
DRM
I
G
=1A; di
G
/dt=1A/us
T
VJ
=T
VJM
; I
T
=300A; t
p
=200us; -di/dt=10A/us
V
R
=100V; dv/dt=50V/us; V
D
=2/3V
DRM
T
VJ
=125
o
C; I
T
, I
F
=400A; -di/dt=50A/us
typ.
V
D
=6V;
V
D
=6V;
T
VJ
=T
VJM
;
T
VJ
=25
o
C
T
VJ
=-40
o
C
T
VJ
=25
o
C
T
VJ
=-40
o
C
V
D
=2/3V
DRM
I
T
, I
F
=600A; T
VJ
=25
o
C
For power-loss calculations only (T
VJ
=140
o
C)
Test Conditions
T
VJ
=T
VJM
; V
R
=V
RRM
; V
D
=V
DRM
Characteristic Values
70
40
1.32
0.8
0.82
2
3
150
200
0.25
10
200
150
2
200
760
275
0.112
0.056
0.152
0.076
12.7
9.6
50
Unit
mA
mA
V
V
m
V
mA
V
mA
mA
mA
us
us
uC
A
K/W
K/W
mm
mm
m/s
2
FEATURES
* International standard package
* Direct copper bonded Al
2
O
3
-ceramic
base plate
* Planar passivated chips
* Isolation voltage 3600 V~
APPLICATIONS
* Motor control
* Power converter
* Heat and temperature control for
industrial furnaces and chemical
processes
* Lighting control
* Contactless switches
ADVANTAGES
* Space and weight savings
* Simple mounting
* Improved temperature and power
cycling
* Reduced protection circuits
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
