SUR2x120-02
Ultra Fast Recovery Epitaxial Diodes
Dimensions SOT-227(ISOTOP)
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
Millimeter
Min.
Max.
31.50
7.80
4.09
4.09
4.09
14.91
30.12
37.80
11.68
8.92
0.76
12.60
25.15
1.98
4.95
26.54
3.94
4.72
24.59
-0.05
3.30
0.780
31.88
8.20
4.29
4.29
4.29
15.11
30.30
38.20
12.22
9.60
0.84
12.85
25.42
2.13
5.97
26.90
4.42
4.85
25.07
0.1
4.57
0.830
Inches
Min.
Max.
1.240
0.307
0.161
0.161
0.161
0.587
1.186
1.489
0.460
0.351
0.030
0.496
0.990
0.078
0.195
1.045
0.155
0.186
0.968
-0.002
0.130
19.81
1.255
0.323
0.169
0.169
0.169
0.595
1.193
1.505
0.481
0.378
0.033
0.506
1.001
0.084
0.235
1.059
0.174
0.191
0.987
0.004
0.180
21.08
SUR2x120-02
V
RSM
V
200
V
RRM
V
200
R
S
T
U
V
W
Symbol
I
FRMS
I
FAVM
I
FRM
Test Conditions
T
VJ
=T
VJM
T
C
=70
o
C; rectangular, d=0.5
t
p
<10us; rep. rating, pulse width limited by T
VJM
T
VJ
=45
o
C
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
Maximum Ratings
150
123
600
1200
1300
1080
1170
7200
7100
5800
5700
-40...+150
150
-40...+150
Unit
A
I
FSM
T
VJ
=150
o
C
T
VJ
=45
o
C
A
It
2
T
VJ
=150 C
o
A
2
s
T
VJ
T
VJM
T
stg
P
tot
V
ISOL
M
d
Weight
T
C
=25
o
C
50/60Hz, RMS
_
I
ISOL
<1mA
Mounting torque
Terminal connection torque (M4)
o
C
250
2500
1.5/13
1.5/13
30
W
V~
Nm/lb.in.
g
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
