SUR2x30-04, SUR2x30-06
Ultra Fast Recovery Epitaxial Diodes
Symbol
Test Conditions
T
VJ
=25
o
C; V
R
=V
RRM
T
VJ
=25
o
C; V
R
=0.8
.
V
RRM
T
VJ
=125
o
C; V
R
=0.8
.
V
RRM
I
F
=30A; T
VJ
=150
o
C
T
VJ
=25
o
C
For power-loss calculations only
T
VJ
=T
VJM
Characteristic Values
typ.
max.
100
50
7
1.4
1.6
1.01
7.1
1.25
0.05
Unit
uA
uA
mA
V
V
m
K/W
ns
A
I
R
V
F
V
TO
r
T
R
thJC
R
thCK
t
rr
I
RM
I
F
=1A; -di/dt=100A/us; V
R
=30V; T
VJ
=25
o
C
_
V
R
=350V; I
F
=30A; -di
F
/dt=240A/us; L<0.05uH; T
VJ
=100
o
C
35
10
50
11
FEATURES
* International standard package
miniBLOC (ISOTOP compatible)
* Isolation voltage 2500 V~
* 2 independent FRED in 1
package
* Planar passivatd chips
* Very short recovery time
* Extremely low switching losses
* Low I
RM
-values
* Soft recovery behaviour
APPLICATIONS
* Antiparallel diode for high frequency
switching devices
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Inductive heating and melting
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
ADVANTAGES
* High reliability circuit operation
* Low voltage peaks for reduced
protection circuits
* Low noise switching
* Low losses
* Operating at lower temperature or
space saving by reduced cooling
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
