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NGA-386 参数 Datasheet PDF下载

NGA-386图片预览
型号: NGA-386
PDF下载: 下载PDF文件 查看货源
内容描述: DC -5000兆赫,可级联的GaAs HBT MMIC放大器 [DC-5000 MHz, Cascadable GaAs HBT MMIC Amplifier]
分类和应用: 放大器射频微波
文件页数/大小: 5 页 / 353 K
品牌: SIRENZA [ SIRENZA MICRODEVICES ]
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Preliminary
Product Description
NGA-386
Sirenza Microdevices’ NGA-386 is a high performance Gallium
Arsenide Heterojunction Bipolar Transistor MMIC Amplifier.
Designed with InGaP process technology for improved reliability,
a Darlington configuration is utilized for broadband performance
up to 5 Ghz. The heterojunction increases breakdown voltage
and minimizes leakage current between junctions. Cancellation
of emitter junction non-linearities results in higher suppres-
sion of intermodulation products.
DC-5000 MHz, Cascadable GaAs
HBT MMIC Amplifier
Contact Factory
See Application Note AN-059 for Alternates
Obsolete
Small Signal Gain vs. Frequency
25
20
15
dB
Product Features
•
High Gain: 18.9dB at 1950Mhz
•
Cascadable 50 ohm: 1.2:1 VSWR
•
Operates from Single Supply
•
Low Thermal Resistance Package
•
Unconditionally Stable
Applications
•
PA Driver Amplifier
•
Cellular, PCS, GSM, UMTS
•
IF Amplifier
•
Wireless Data, Satellite
Units
dBm
Frequency
850 M Hz
1950 M Hz
2400 M Hz
850 M Hz
1950 M Hz
2400 M Hz
850 M Hz
1950 M Hz
2400 M Hz
DC - 5000 M Hz
DC - 5000 M Hz
2000 M Hz
3.5
30
18.8
Min.
Ty p.
14.5
15.0
15.6
25.8
27.0
27.0
20.9
18.9
18.0
5000
1.2:1
1.3:1
2.7
4.0
35
144
4.5
45
23.0
Max.
10
5
0
0
Sy mbol
P
1dB
1
2
3
4
5
Frequency GHz
Parameter
6
7
Output Pow er at 1dB Compression
OIP
3
Output Third Order Intercept Point
dBm
G
Small Signal Gain
dB
M Hz
-
-
dB
V
mA
°C/W
Bandw idth
Determined by Return Loss (>10dB)
Input VSWR
Output VSWR
NF
V
D
I
D
R
TH
, j-l
Noise Figure
Device Operating Voltage
Device Operating Current
Thermal Resistance (junction to lead)
Test Conditions:
V
S
= 8 V
R
BIAS
= 120 Ohms
I
D
= 35 mA Typ.
T
L
= 25ºC
OIP
3
Tone Spacing = 1 MHz, Pout per tone = 0 dBm
Z
S
= Z
L
= 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of
this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are
implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc..
All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-101103 Rev E