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NGA-489 参数 Datasheet PDF下载

NGA-489图片预览
型号: NGA-489
PDF下载: 下载PDF文件 查看货源
内容描述: 的InGaP /砷化镓HBT MMIC放大器 [InGaP/GaAs HBT MMIC Amplifier]
分类和应用: 放大器射频微波
文件页数/大小: 5 页 / 419 K
品牌: SIRENZA [ SIRENZA MICRODEVICES ]
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Product Description
NGA-489
Sirenza Microdevices’ NGA-489 is a high performance InGaP/
GaAs HBT MMIC Amplifier. A Darlington configuration designed
with InGaP process technology provides broadband performance
up to 10 GHz with excellent thermal perfomance. The
heterojunction increases breakdown voltage and minimizes
leakage current between junctions. Cancellation of emitter
junction non-linearities results in higher suppression of
intermodulation products. At 850 Mhz and 65mA , the NGA-
489 typically provides +38.0 dBm output IP3, 15 dB of gain,
and +17.2 dBm of 1dB compressed power using a single positive
voltage supply. Only 2 DC-blocking capacitors, a bias resistor
and an optional RF choke are required for operation.
Gain & Return Loss vs. Freq. @T
L
=+25°C
(From de-imbedded S-parameters)
0.5-10 GHz, Cascadable
InGaP/GaAs HBT MMIC Amplifier
See Application Note AN-059 for Alternates
OBSOLETE
Product Features
•
High Gain : 14.5 dB at 1950 MHz
• Cascadable 50 Ohm
• Patented InGaP Technology
• Operates From Single Supply
• Low Thermal Resistance Package
20
15
Gain (dB)
GAIN
IRL
0
-10
-20
-30
ORL
Return Loss (dB)
10
5
0
0
Applications
• PA Driver Amplifier
• Cellular, PCS, GSM, UMTS
• IF Amplifier
• Wireless Data, Satellite
Units
dB
dBm
dBm
M Hz
dB
dB
dB
V
mA
°C/W
1950 M Hz
1950 M Hz
1950 M Hz
3.6
59
Frequency
850 M Hz
1950 M Hz
2400 M Hz
850 M Hz
1950 M Hz
850 M Hz
1950 M Hz
Min.
13.5
Ty p.
15.0
14.5
14.2
17.2
17.0
38.0
37.0
10000
19.7
27.0
4.0
4.0
65
145
4.4
71
Max.
16.0
-40
1
2
3
4
5
6
7
Frequency (GHz)
8
9
10
Sy mbol
G
P
1dB
OIP
3
Parameter
Small Signal Gain
Output Pow er at 1dB Compression
Output Third Order Intercept Point
Bandw idth
Determined by Return Loss (>10dB)
IRL
ORL
NF
V
D
I
D
R
TH
, j-l
Input Return Loss
Output Return Loss
Noise Figure
Device Operating Voltage
Device Operating Current
Thermal Resistance (junction to lead)
V
S
= 8 V
R
BIAS
= 62 Ohms
I
D
= 65 mA Typ.
T
L
= 25ºC
Test Conditions:
OIP
3
Tone Spacing = 1 MHz, Pout per tone = 0 dBm
Z
S
= Z
L
= 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of
this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are
implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc..
All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-100375 Rev OBS