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NGA-586 参数 Datasheet PDF下载

NGA-586图片预览
型号: NGA-586
PDF下载: 下载PDF文件 查看货源
内容描述: DC - 5.5 GHZ级联间隙/砷化镓MMIC放大器 [DC-5.5 GHZ CASCADABLE IN GAP /GAAS MMIC AMPLIFIER]
分类和应用: 放大器射频微波
文件页数/大小: 5 页 / 402 K
品牌: SIRENZA [ SIRENZA MICRODEVICES ]
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Product Description
NGA-586
Sirenza Microdevices’ NGA-586 is a high performance InGaP/
GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A
Darlington configuration designed with InGaP process
technology provides broadband performance up to 5.5 GHz with
excellent thermal perfomance. The heterojunction increases
breakdown voltage and minimizes leakage current between
junctions. Cancellation of emitter junction non-linearities results
in higher suppression of intermodulation products. At 850 Mhz
and 80mA , the NGA-586 typically provides +39.6 dBm output
IP3, 19.8 dB of gain, and +18.9 dBm of 1dB compressed power
using a single positive voltage supply. Only 2 DC-blocking
capacitors, a bias resistor and an optional RF choke are required
for operation.
Gain & Return Loss vs. Freq. @T
L
=+25°C
24
GAIN
DC-5.5 GHz, Cascadable
InGaP/GaAs HBT MMIC Amplifier
See Application Note AN-059 for Alternates
OBSOLETE
Product Features
•
High Gain : 18.6 dB at 1950 MHz
• Cascadable 50 Ohm
• Patented InGaP Technology
• Operates From Single Supply
• Low Thermal Resistance Package
0
20
Gain (dB)
IRL
-10
Return Loss (dB)
16
ORL
-20
Applications
• PA Driver Amplifier
• Cellular, PCS, GSM, UMTS
• IF Amplifier
• Wireless Data, Satellite
Units
dB
dBm
dBm
M Hz
dB
dB
dB
V
mA
°C/W
1950 M Hz
1950 M Hz
1950 M Hz
4.5
72
Frequency
850 M Hz
1950 M Hz
2400 M Hz
850 M Hz
1950 M Hz
850 M Hz
1950 M Hz
Min.
17.8
Ty p.
19.8
18.6
17.9
18.9
18.5
39.6
34.0
5500
14.9
19.5
3.5
4.9
80
121
5.4
88
Max.
21.8
12
-30
8
0
1
2
3
4
Frequency (GHz)
5
6
-40
Sy mbol
G
P
1dB
OIP
3
Parameter
Small Signal Gain
Output Pow er at 1dB Compression
Output Third Order Intercept Point
Bandw idth
Determined by Return Loss (>10dB)
IRL
ORL
NF
V
D
I
D
R
TH
, j-l
Input Return Loss
Output Return Loss
Noise Figure
Device Operating Voltage
Device Operating Current
Thermal Resistance (junction to lead)
V
S
= 8v
R
BIAS
= 39 Ohms
I
D
= 80mA Typ.
T
L
= 25ºC
Test Conditions:
IP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm
Z
S
= Z
L
= 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of
this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are
implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc..
All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-101105 Rev. OBS