SBA-5089
Product Description
Sirenza Microdevices’ SBA-5089 is a high performance InGaP/
GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A
Darlington configuration designed with InGaP process technology
provides broadband performance up to 5 GHz with excellent
thermal perfomance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions.
Cancellation of emitter junction non-linearities results in higher
suppression of intermodulation products. Only a single positive
supply voltage, DC-blocking capacitors, a bias resistor, and an
optional RF choke are required for operation.
The matte tin finish on Sirenza’s lead-free package utilizes a
post annealing process to mitigate tin whisker formation and is
RoHS compliant per EU Directive 2002/95. This package is
also manufactured with green molding compounds that contain
no antimony trioxide nor halogenated fire retardants.
Gain & Return Loss
30
20
10
0
-10
-20
S11
S22
S21
SBA-5089Z
Pb
RoHS Compliant
&
Green
Package
DC-5 GHz, Cascadable
InGaP/GaAs HBT MMIC Amplifier
Product Features
• Now available in Lead Free, RoHS
Compliant, & Green Packaging
• IP3 = 34.0dBm @ 1950MHz
• Pout=13.0 dBm @-45dBc ACP IS-95 1950MHz
• Robust 1000V ESD, Class 1C
• Operates From Single Supply
• Patented Thermal Design
Applications
•
•
•
•
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite Terminals
-30
-40
0
1
2
3
Frequency (GHz)
4
5
6
Sym bol
G
P
P a ra m e te r
S m a ll S i g n a l G a i n
O u tp u t P o w e r a t 1 d B C o m p r e s s i o n
O u tp u t T h i r d O r d e r In te r c e p t P o i n t
O u tp u t P o w e r @ - 4 5 d B c A C P IS - 9 5
9 F o r w a r d C h a n n e ls
D e te r m i n e d b y R e tu r n L o s s ( > 1 0 d B )
In p u t R e tu r n L o s s
O u tp u t R e tu r n L o s s
N o is e F ig u re
D e v i c e O p e r a ti n g V o lta g e
D e v i c e O p e r a ti n g C u r r e n t
T h e r m a l R e s i s ta n c e
( ju n c ti o n to le a d )
U n it s
dB
dBm
dBm
dBm
M Hz
dB
dB
dB
V
mA
° C /W
F re q u e n c y
850 M Hz
1950 M Hz
850 M Hz
1950 M Hz
850 M Hz
1950 M Hz
1950 M Hz
M in .
1 8 .5
1 6 .5
1 8 .0
3 2 .0
Typ .
2 0 .0
1 8 .0
1 9 .7
1 9 .5
3 6 .0
3 4 .0
1 3 .0
4400
M ax.
2 1 .5
1 9 .5
1dB
O IP
P
3
OUT
B a n d w i d th
IR L
ORL
NF
V
D
1950 M Hz
1950 M Hz
1950 M Hz
1 4 .0
9 .0
2 0 .0
1 1 .0
4 .5
5 .5
5 .3
88
4 .7
72
4 .9
80
70
I
D
R
T H
, j- l
Test Conditions:
V
S
= 8 V
R
BIAS
= 39 Ohms
I
D
= 80 mA Typ.
T
L
= 25ºC
OIP
3
Tone Spacing = 1 MHz, Pout per tone = 0 dBm
Z
S
= Z
L
= 50 Ohms
Performance tests and ratings for Sirenza Microdevices’ products were performed internally by Sirenza and measured using specific computer systems and/or and components and reflect the approximate performance
of the products as measured by those tests. Any difference in circuit implementation, test software or test equipment may affect actual performance. The information provided herein is believed to be reliable at press
time and Sirenza Microdevices assumes no responsibility for the use of this information. All such use shall be entirely at the user’s own risk. Prices and specifications for Sirenza Microdevices’ products are subject
to change without notice. Buyers should consult Sirenza Microdevices’ standard terms and conditions of sale for Sirenza’s limited warranty with regard to its products. No patent rights or licenses to any of the circuits
described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any product for use in life-support devices and/or systems.
303 South Technology Ct., Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-102743 Rev. D
SIRENZA [ SIRENZA MICRODEVICES ]
