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SBB-4089 参数 Datasheet PDF下载

SBB-4089图片预览
型号: SBB-4089
PDF下载: 下载PDF文件 查看货源
内容描述: 0.05-6千兆赫,可级联的有源偏置的InGaP /砷化镓HBT MMIC放大器 [0.05-6 GHz, Cascadable Active Bias InGaP/GaAs HBT MMIC Amplifier]
分类和应用: 放大器射频微波
文件页数/大小: 6 页 / 379 K
品牌: SIRENZA [ SIRENZA MICRODEVICES ]
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Product Description
Sirenza Microdevices’ SBB-4089 is a high performance InGaP HBT MMIC
amplifier utilizing a Darlington configuration with an active bias network.
The active bias network provides stable current over temperature and
process Beta variations. Designed to run directly from a 5V supply, the
SBB-4089 does not require a dropping resistor as compared to typical
Darlington amplifiers. The SBB-4089 product is designed for high linearity
5V gain block applications that require small size and minimal external
components. It is internally matched to 50 ohms.
The matte tin finish on Sirenza’s lead-free package utilizes a post annealing
process to mitigate tin whisker formation and is RoHS compliant per EU
Directive 2002/95. This package is also manufactured with green molding
compounds that contain no antimony trioxide nor halogenated fire retardants.
SBB-4089
SBB-4089Z
Pb
RoHS Compliant
&
Green
Package
0.05-6 GHz, Cascadable
Active Bias InGaP/GaAs HBT MMIC Amplifier
Product Features
Available in Lead Free, RoHS compliant, & Green packaging
IP3 = 35.2 dBm @ 1950MHz
P1dB = 19.3 dBm @ 1950MHz
Single Fixed 5V Supply
Robust 1000V ESD, Class 1C
Patented Thermal Design & Patent Pending Bias Circuit
Low Thermal Resistance
Gain & Return Loss vs. Frequency (w/ BiasTees)
20
10
0
dB
-10
-20
-30
-40
0
1
2
3
Frequency (GHz)
4
5
6
S21
MSL 1 moisture rating
S22
S11
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
Wideband Instrumentation
Wireless Data, Satellite Terminals
U nits
dB
Frequency
850MHz
1950 MHz
2000 MHz
850MHz
1950 MHz
850MHz
1950 MHz
Min.
14.0
14.0
13.5
18
33.0
Typ.
15.0
15.5
15.5
19.0
19.5
39.0
35.0
4500
1950 MHz
1950 MHz
1950 MHz
1950 MHz
10.0
10.0
17.5
17.5
18.5
4.5
5
72
80
69.9
5.5
5.25
92
Max.
17.0
17.0
17.5
Symbol
S
21
P
1dB
OIP
3
Parameter
Small Si gnal Gai n
Output Power at 1dB C ompressi on
Output Thi rd Order Intercept Poi nt
dB m
dB m
MHz
dB
dB
dB
dB
V
mA
°C /W
Bandwi dth S
11
, S
22
: Mi ni mum 10dB Return Loss (typ.)
S
11
S
22
S
12
NF
V
D
I
D
R
TH
, j-l
Input Return Loss
Output Return Loss
Reverse Isolati on
Noi se Fi gure
D evi ce Operati ng Voltage
D evi ce Operati ng C urrent
Thermal Resi stance (juncti on to lead)
V
D
= 5 V
T
L
= 25ºC
I
D
= 80 mA Typ.
Z
S
= Z
L
= 50 Ohms
Test Conditions:
OIP
3
Tone Spacing = 1 MHz, Pout per tone = 0 dBm
Tested with Bias Tees
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-103832 Rev D