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SBB-5089Z 参数 Datasheet PDF下载

SBB-5089Z图片预览
型号: SBB-5089Z
PDF下载: 下载PDF文件 查看货源
内容描述: 0.05-6千兆赫,可级联的有源偏置的InGaP HBT MMIC放大器 [0.05-6 GHz, Cascadable Active Bias InGaP HBT MMIC Amplifier]
分类和应用: 放大器射频微波
文件页数/大小: 6 页 / 144 K
品牌: SIRENZA [ SIRENZA MICRODEVICES ]
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SBB-5089Z
Product Description
Sirenza Microdevices’ SBB-5089Z is a high performance InGaP HBT MMIC
amplifier utilizing a Darlington configuration with an active bias network.
The active bias network provides stable current over temperature and
process Beta variations. Designed to run directly from a 5V supply, the
SBB-5089Z does not require a dropping resistor as compared to typical
Darlington amplifiers. The SBB-5089Z product is designed for high linearity
5V gain block applications that require small size and minimal external
components. It is internally matched to 50 ohms.
The matte tin finish on Sirenza’s lead-free package utilizes a post annealing
process to mitigate tin whisker formation and is RoHS compliant per EU
Directive 2002/95. This package is also manufactured with green molding
compounds that contain no antimony trioxide nor halogenated fire retardants.
0.05-6 GHz, Cascadable Active Bias
InGaP HBT MMIC Amplifier
Pb
Product Features
RoHS Compliant
&
Green
Package
Gain & Return Loss vs. Frequency (w/ BiasTees)
30
20
10
dB
0
-10
-20
-30
-40
0
1
2
3
Frequency (GHz)
Parameters
Wideband Flat Gain to 4GHz: +/-1.1dB
P1dB = 20.4 dBm @ 1950MHz
Single Fixed 5V Supply
Robust 1000V ESD, Class 1C
Patented Thermal Design & Bias Circuit
Low Thermal Resistance
MSL 1 moisture rating
S21
Applications
S22
S11
4
5
6
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
Wideband Intrumentation
Wireless Data, Satellite Terminals
Symbol
Units
Frequency
Min.
Typ.
Max.
S
21
Small Signal Gain
dB
850 MHz
1950 MHz
6000 MHz
850 MHz
1950 MHz
850 MHz
1950 MHz
19
18.5
14.5
19
33
20.5
20
16
20.5
20.5
38.5
35
3000
22
21.5
17.5
P
1dB
IP
3
Bandwidth
S
11
S
22
S
12
NF
V
D
I
D
R
TH
, j-l
Test Conditions:
Output Power at 1 dB Compression
Third Order Intercept Point
S
11
, S
22
: Minimum 10dB Return Loss (typ.)
Input Return Loss
Output Return Loss
Reverse Isolation
Noise Figure
Device Operating Voltage
Device Operating Current
Thermal Resistance (junction - lead)
V
D
= 5V
T
L
= 25°C
I
D
= 75 mA Typ.
Z
S
= Z
L
= 50 Ohms
dBm
dBm
MHz
dB
dB
dB
dB
V
mA
°C/W
1950 MHz
1950 MHz
1950 MHz
1950 MHz
10
10
14
14
23.3
4.2
5
4.9
5.25
92
65
75
69.9
OIP
3
Tone Spacing = 1MHz, Pout per tone = 0 dBm
Tested with Bias Tees
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-103839 Rev F