Product Description
Sirenza Microdevices’ SBF-4089 is a high performance InGaP/
GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A
Darlington configuration designed with InGaP process
technology provides broadband performance up to 0.5 GHz
with excellent thermal perfomance. The heterojunction
increases breakdown voltage and minimizes leakage current
between junctions. Cancellation of emitter junction non-
linearities results in higher suppression of intermodulation
products. Only a single positive supply voltage, DC-blocking
capacitors, a bias resistor, and an optional RF choke are
required for operation.
The matte tin finish on Sirenza’s lead-free package utilizes a
post annealing process to mitigate tin whisker formation and
is RoHS compliant per EU Directive 2002/95. This package is
also manufactured with green molding compounds that
contain no antimony trioxide nor halogenated fire retardants.
S -P aram e te rs v s F re q u e n c y +2 5 c
16
15.5
15
14.5
Gain(dB)
s 21
s 11
s 22
SBF-4089
SBF-4089Z
Pb
RoHS Compliant
&
Green
Package
DC-500 MHz, Cascadable
InGaP/GaAs HBT MMIC Amplifier
Product Features
•
Available in Lead Free, RoHS compliant,
& Green packaging
• IP3 = 42dBm @ 240MHz
• Stable Gain Over Temperature
•
Robust 1000V ESD, Class 1C
• Operates From Single Supply
• Low Thermal Resistance
0
-5
-10
-15
-20
-25
IRL,ORL(dB)
14
13.5
13
12.5
12
11.5
11
0
100
200
300
400
500
600
700
800
900
Fre q
Applications
• Receiver IF Amplifier
• Cellular, PCS, GSM, UMTS
• PA Driver Amp
• Wireless Data, Satellite Terminals
U nits
dB
Frequency
70MHz
240 MHz
500 MHz
70MHz
240 MHz
400 MHz
70MHz
240 MHz
400 MHz
500 MHz
500 MHz
500 MHz
4.5
82
Min.
13.3
13.2
Typ.
14.9
14.8
14.7
20.1
20.1
19.9
40.0
42.0
41.0
17.0
16.0
3.3
4.9
90
43
4.3
5.3
98
Max.
16.3
16.2
Symbol
G
Parameter
Small Si gnal Gai n
P
1dB
Output Power at 1dB C ompressi on
dB m
18.4
OIP
3
IRL
ORL
NF
V
D
I
D
R
TH
, j-l
Output Thi rd Order Intercept Poi nt
Input Return Loss
Output Return Loss
Noi se Fi gure
D evi ce Operati ng Voltage
D evi ce Operati ng C urrent
Thermal Resi stance (juncti on to lead)
V
S
= 8 V
R
BIAS
= 33 Ohms
I
D
= 90 mA Typ.
T
L
= 25ºC
dB m
dB
dB
dB
V
mA
°C /W
39.0
13.0
12.0
Test Conditions:
OIP
3
Tone Spacing = 1 MHz, Pout per tone = 0 dBm
Z
S
= Z
L
= 50 Ohms, App circuit page 4.
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of
this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are
implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc..
All worldwide rights reserved.
303 South Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-103412 Rev. C
SIRENZA [ SIRENZA MICRODEVICES ]
