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SDM-09120Y 参数 Datasheet PDF下载

SDM-09120Y图片预览
型号: SDM-09120Y
PDF下载: 下载PDF文件 查看货源
内容描述: 925-960 MHz的AB类130W功率放大器模块 [925-960 MHz Class AB 130W Power Amplifier Module]
分类和应用: 放大器功率放大器
文件页数/大小: 5 页 / 200 K
品牌: SIRENZA [ SIRENZA MICRODEVICES ]
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Product Description
Sirenza Microdevices’
SDM-09120
130W power module is a robust
impedance matched, single-stage, push-pull Class AB amplifier mod-
ule suitable for use as a power amplifier driver or output stage. The
power transistors are fabricated using Sirenza's latest, high perfor-
mance LDMOS process. It is a drop-in, no-tune solution for high power
applications requiring high efficiency, excellent linearity, and unit-to-
unit repeatability. It is internally matched to 50 ohms.
SDM-09120
SDM-09120Y
Pb
&
Green
Package
RoHS Compliant
925-960 MHz Class AB
130W Power Amplifier Module
Functional Block Diagram
Vgs
+3V DC to +6 V DC
+28V DC
1
Vds
1
180
o
0
o
Gnd
Balun
RF
in
Balun
Gnd
Product Features
RF
out
Gnd
0
+3V DC to +6 V DC
o
Gnd
180
o
Vgs
2
+28V DC
Vds
2
Available in RoHS compliant packaging
50
W
RF impedance
130W Output P
1dB
Single Supply Operation : Nominally 28V
High Gain: 15 dB at 942 MHz
High Efficiency: 42% at 942 MHz
Case Flange = Ground
Applications
Key Specifications
Symbol
Frequency
P
1dB
Gain
Gain Flatness
IRL
IMD
IMD Variation
Efficiency
Delay
Parameter
Frequency of Operation
Output Power at 1dB Compression, 943 MHz
120W PEP Output Power, 942MHz and 943MHz
Base Station PA driver
Repeater
CDMA
GSM / EDGE
Units
MHz
W
dB
dB
dB
dBc
dB
%
%
nS
Deg
Min.
925
120
14
-
-
-
-
32
-
-
-
Typ.
-
130
15
0.3
-14
-28
1.0
33
42
4.0
0.7
Max.
960
-
-
0.5
-12
-26
-
-
-
-
-
Peak-to-Peak Gain Variation, 120W PEP, 925 - 960MHz
Input Return Loss, 120W PEP Output Power, 925 - 960MHz
3rd Order Product. 120W PEP Output, 942MHz and 943MHz
120W PEP Output, Change in Spacing 100KHz - 25MHz
Drain Efficiency, 120W PEP Output, 942MHz and 943MHz
Drain Efficiency, 120W CW Output, 943MHz
Signal Delay from Pin 3 to Pin 8
Phase Linearity
Deviation from Linear Phase (Peak-to-Peak)
T
Test Conditions Z
in
= Z
out
= 50Ω, V
DD
= 28.0V, I
DQ1
= I
DQ2
=500mA T
Flange
= 25ºC
Quality Specifications
Parameter
ESD Rating
MTTF
Description
Human Body Model
200 C Channel
o
Unit
Volts
Hours
Typical
2000
1.2 X 10
6
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such
information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices
does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 S. Technology Court,
Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-103478 Rev E