Product Description
Sirenza Microdevices’
SDM-08120
130W power module is a robust
impedance matched, single-stage, push-pull Class AB amplifier mod-
ule suitable for use as a power amplifier driver or output stage. The
power transistors are fabricated using Sirenza's latest, high perfor-
mance LDMOS process. It is a drop-in, no-tune solution for high power
applications requiring high efficiency, excellent linearity, and unit-to-
unit repeatability. It is internally matched to 50 ohms.
SDM-08120
SDM-08120Y
Pb
RoHS Compliant
&
Green
Package
869-894 MHz Class AB
130W Power Amplifier Module
Functional Block Diagram
Vgs
+3V DC to +6 V DC
+28V DC
1
Vds
1
180
Gnd
Balun
RF
in
Balun
RF
out
o
0
o
Gnd
Product Features
Gnd
0
o
Gnd
180
o
Vgs
2
+3V DC to +6 V DC
+28V DC
Vds
2
•
•
•
•
•
•
•
•
•
Available in RoHS compliant packaging
50
W
RF impedance
130W Output P
1dB
Single Supply Operation : Nominally 28V
High Gain: 16 dB at 880 MHz
High Efficiency: 42% at 880 MHz
Applications
Case Flange = Ground
Base Station PA driver
Repeater
CDMA / GSM / EDGE
Units
MHz
W
dB
dB
%
%
dB
dBc
dBc
dBc
dBc
nS
Deg
ºC/W
-
-
-
-
-
-
Min.
869
120
14
-
Typ.
-
130
16
0.5
42
20
-15
-55
-63
-46
-34
4.0
0.7
0.7
-12
-50
-60
-
-30
-
-
Max.
894
-
-
1.0
Key Specifications
Symbol
Frequency
P
1dB
Gain
Gain Flatness
Efficiency
Efficiency
IRL
CDMA ACPR
Integrated Bandwidth
IMD
Delay
Phase Linearity
R
TH
Parameter
Frequency of Operation
Output Power at 1dB Compression, 881 MHz
Gain at 12W CDMA Output (Single Carrier IS-95), 881MHz
Peak-to-Peak Gain Variation, 869 - 894MHz, 12 Watt
Drain Efficiency at 120 Watts Output Power, CW 880 MHz
Drain Efficiency at 24 Watts Output Power, 869 - 894MHz
Input Return Loss 24W CW Output Power, 869 - 894MHz
IS-95, 9 Ch Fwd, Offset=750KHz, 881MHz, Pout=12W avg
IS-95, 9 Ch Fwd, Offset=1.98MHz, 881MHz, Pout=12W avg
IS-95, 9 Ch Fwd, Offset=750kHz, 881MHz, Pout=24W avg
3rd Order IMD Product,120W PEP, 880MHz and 881MHz
Signal Delay from Pin 3 to Pin 8
Deviation from Linear Phase (Peak-to-Peak)
Thermal Resistance (Junction-to-Case)
Test Conditions Z
in
= Z
out
= 50Ω, V
DD
= 28.0V, I
DQ1
= I
DQ2
=600mA T
Flange
= 25ºC
Quality Specifications
Parameter
ESD Rating
MTTF
Description
Human Body Model
200
o
C Channel
Unit
Volts
Hours
Typical
2000
1.2 X 10
6
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such
information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices
does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 S. Technology Court,
Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-103346 Rev F
SIRENZA [ SIRENZA MICRODEVICES ]
