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SGA-0163Z 参数 Datasheet PDF下载

SGA-0163Z图片预览
型号: SGA-0163Z
PDF下载: 下载PDF文件 查看货源
内容描述: DC -4500 MHz的硅锗可级联增益模块 [DC-4500 MHz, Silicon Germanium Cascadeable Gain Block]
分类和应用: 射频微波
文件页数/大小: 5 页 / 250 K
品牌: SIRENZA [ SIRENZA MICRODEVICES ]
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Preliminary
SGA-0163
Product Description
The SGA-0163 is a high performance SiGe HBT MMIC Amplifier.
A Darlington configuration featuring 1 micron emitters provides
high FT and excellent thermal perfomance. The heterojunction
increases breakdown voltage and minimizes leakage current be-
tween junctions. Cancellation of emitter junction non-linearities
results in higher suppression of intermodulation products. Only
2 DC-blocking capacitors, a bias resistor and an optional RF
choke are required for operation.
The matte tin finish on Sirenza’s lead-free package utilizes a
post annealing process to mitigate tin whisker formation and is
RoHS compliant per EU Directive 2002/95. This package is also
manufactured with green molding compounds that contain no
antimony trioxide nor halogenated fire retardants.
Small Signal Gain vs. Frequency
15
SGA-0163Z
Pb
RoHS Compliant
&
Green
Package
Preliminary
DC-4500 MHz, Silicon Germanium Cascadeable
Gain Block
Product Features
• Now available in Lead Free, RoHS
Compliant, & Green Packaging
• DC-4500 MHz Operation
• Single Voltage Supply
• Low Current Draw: 8mA at 2.1V typ.
• High Output Intercept: 10 dBm typ. at 1900 MHz
10
Applications
• PA Driver Amplifier
• Cellular, PCS, GSM, UMTS
• IF Amplifier
• Wireless Data, Satellite
0
1
2
3
4
5
6
dB
5
0
Frequency GHz
Symbol
P
1dB
Parameter
Output Pow er at 1dB Compression
Frequency
850 MHz
1950 MHz
2400 MHz
850 MHz
1950 MHz
2400 MHz
850 MHz
1950 MHz
2400 MHz
Units
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
dB
MHz
Min.
Typ.
-1.8
-1.8
-2.4
9.4
9.8
9.2
12.7
12.0
11.6
4500
1.6:1
1.3:1
17.6
18.1
18.3
4.6
2.1
Max.
IP
3
Third Order Intercept Point
S
21
BW
3dB
VSWR
IN
VSWR
OUT
S
12
NF
V
D
I
D
R
TH
, j-l
Small Signal Gain
3dB Bandw idth
Input VSWR
Output VSWR
Reverse Isolation
Noise Figure
Device Operating Voltage
Device Operating Current
Thermal Resistance (junction - lead)
DC - 4500MHz
DC - 4500MHz
850 MHz
1950 MHz
2400 MHz
1950 MHz
-
-
dB
dB
dB
dB
V
mA
ºC/W
6
8
255
10
Test Conditions:
V
S
= 5 V
R
BIAS
= 360 Ohms
I
D
= 5 mA Typ.
T
L
= 25ºC
OIP
3
Tone Spacing = 1 MHz, Pout per tone = -17 dBm
Z
S
= Z
L
= 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-101494 Rev D