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SGA-0363 参数 Datasheet PDF下载

SGA-0363图片预览
型号: SGA-0363
PDF下载: 下载PDF文件 查看货源
内容描述: DC -5000 MHz的硅锗可级联增益模块 [DC-5000 MHz, Silicon Germanium Cascadeable Gain Block]
分类和应用: 射频微波
文件页数/大小: 5 页 / 251 K
品牌: SIRENZA [ SIRENZA MICRODEVICES ]
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Preliminary
SGA-0363
Product Description
The SGA-0363 is a high performance SiGe HBT MMIC Amplifier. A
Darlington configuration featuring 1 micron emitters provides high
FT and excellent thermal perfomance. The heterojunction in-
creases breakdown voltage and minimizes leakage current be-
tween junctions. Cancellation of emitter junction non-linearities
results in higher suppression of intermodulation products. Only
2 DC-blocking capacitors, a bias resistor and an optional RF
choke are required for operation.
The matte tin finish on Sirenza’s lead-free package utilizes a
post annealing process to mitigate tin whisker formation and is
RoHS compliant per EU Directive 2002/95. This package is also
manufactured with green molding compounds that contain no
antimony trioxide nor halogenated fire retardants.
Small Signal Gain vs. Frequency
25
20
15
SGA-0363Z
Pb
RoHS Compliant
&
Green
Package
Preliminary
DC-5000 MHz, Silicon Germanium
Cascadeable Gain Block
Product Features
• Now available in Lead Free, RoHS
Compliant, & Green Packaging
• DC-5000 MHz Operation
• Single Voltage Supply
• Low Current Draw: 11mA at 2.5V typ.
• High Output Intercept: 14 dBm typ. at 1950MHz
Applications
• PA Driver Amplifier
• Cellular, PCS, GSM, UMTS
• IF Amplifier
• Wireless Data, Satellite
Frequency
850 MHz
1950 MHz
2400 MHz
850 MHz
1950 MHz
2400 MHz
850 MHz
1950 MHz
2400 MHz
dB
10
5
0
0
1
2
3
4
5
6
Frequency GHz
Symbol
P
1dB
Parameter
Output Pow er at 1dB Compression
Units
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
dB
MHz
Min.
Typ.
2.3
2.3
1.6
14.2
14.0
13.1
19.6
17.2
16.2
5000
1.8:1
1.7:1
24.0
22.8
22.1
3.0
2.5
Max.
IP
3
Third Order Intercept Point
S
21
BW
3dB
VSWR
IN
VSWR
OUT
S
12
NF
V
D
I
D
R
TH
, j-l
Small Signal Gain
3dB Bandw idth
Input VSWR
Output VSWR
Reverse Isolation
Noise Figure
Device Operating Voltage
Device Operating Current
Thermal Resistance (junction - lead)
DC - 4500MHz
DC - 4500MHz
850 MHz
1950 MHz
2400 MHz
1950 MHz
-
-
dB
dB
dB
dB
V
mA
ºC/W
9
11
255
13
Test Conditions:
V
S
= 5 V
R
BIAS
= 220 Ohms
I
D
= 11 mA Typ.
T
L
= 25ºC
OIP
3
Tone Spacing = 1 MHz, Pout per tone = -12 dBm
Z
S
= Z
L
= 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-101495 Rev D