欢迎访问ic37.com |
会员登录 免费注册
发布采购

SGA-3286 参数 Datasheet PDF下载

SGA-3286图片预览
型号: SGA-3286
PDF下载: 下载PDF文件 查看货源
内容描述: DC -5000 MHZ级联SIGE HBT MMIC放大器 [DC-5000 MHZ CASCADABLE SIGE HBT MMIC AMPLIFIER]
分类和应用: 放大器射频微波
文件页数/大小: 5 页 / 399 K
品牌: SIRENZA [ SIRENZA MICRODEVICES ]
 浏览型号SGA-3286的Datasheet PDF文件第2页浏览型号SGA-3286的Datasheet PDF文件第3页浏览型号SGA-3286的Datasheet PDF文件第4页浏览型号SGA-3286的Datasheet PDF文件第5页  
Product Description
Sirenza Microdevices’ SGA-3286 is a high performance SiGe
HBT MMIC Amplifier. A Darlington configuration featuring 1
micron emitters provides high F
T
and excellent thermal
perfomance. The heterojunction increases breakdown voltage
and minimizes leakage current between junctions. Cancellation
of emitter junction non-linearities results in higher suppression
of intermodulation products. At 850 Mhz and 35mA , the SGA-
3286 typically provides +25.5 dBm output IP3, 14.5 dB of gain,
and +12.2 dBm of 1dB compressed power using a single positive
voltage supply. Only 2 DC-blocking capacitors, a bias resistor
and an optional RF choke are required for operation.
Gain & Return Loss vs. Frequency
V
D
= 2.6 V, I
D
= 35 mA (Typ.)
SGA-3286
DC-5000 MHz, Cascadable
SiGe HBT MMIC Amplifier
Product Features
•
Broadband Operation: DC-5000 MHz
• Cascadable 50 Ohm
• Patented SiGe Technology
20
15
Gain (dB)
10
ORL
GAIN
IRL
0
-10
-20
-30
-40
0
1
2
3
Frequency (GHz)
4
5
Return Loss (dB)
• Operates From Single Supply
• Low Thermal Resistance Package
Applications
• PA Driver Amplifier
• Cellular, PCS, GSM, UMTS
• IF Amplifier
• Wireless Data, Satellite
Units
dB
dBm
dBm
M Hz
dB
dB
dB
V
mA
°C/W
1950 M Hz
1950 M Hz
1950 M Hz
2.3
31
Frequency
850 M Hz
1950 M Hz
2400 M Hz
850 M Hz
1950 M Hz
850 M Hz
1950 M Hz
Min.
13.0
Ty p.
14.5
13.0
12.2
12.2
11.3
25.5
24.8
5000
19.2
22.7
3.8
2.6
35
97
2.9
39
Max.
16.0
5
0
Sy mbol
G
P
1dB
OIP
3
Parameter
Small Signal Gain
Output Pow er at 1dB Compression
Output Third Order Intercept Point
Bandw idth
Determined by Return Loss (>10dB)
IRL
ORL
NF
V
D
I
D
R
TH
, j-l
Input Return Loss
Output Return Loss
Noise Figure
Device Operating Voltage
Device Operating Current
Thermal Resistance (junction to lead)
V
S
= 5 V
R
BIAS
= 68 Ohms
I
D
= 35 mA Typ.
T
L
= 25ºC
Test Conditions:
OIP
3
Tone Spacing = 1 MHz, Pout per tone = -5 dBm
Z
S
= Z
L
= 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of
this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are
implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc..
All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-100631 Rev. D