Product Description
The SGA-3586 is a high performance SiGe HBT MMIC Amplifier. A
Darlington configuration featuring 1 micron emitters provides high F
T
and excellent thermal perfomance. The heterojunction increases
breakdown voltage and minimizes leakage current between junctions.
Cancellation of emitter junction non-linearities results in high
suppression of intermodulation products. Operation requires only a
single positive voltage supply, 2 DC-blocking capacitors, a bias resistor
and an RF choke.
The matte tin finish on Sirenza’s lead-free “Z” package is applied
using a post annealing process to mitigate tin whisker formation
and is RoHS compliant per EU Directive 2002/95. The package
body is manufactured with green molding compounds that contain
no antimony trioxide or halogenated fire retardants.
Gain & Return Loss vs. Frequency
32
G A IN
IR L
I
D
= 35 mA (Typ.)
SGA-3586
SGA-3586Z
Pb
RoHS Compliant
&
Green
Package
DC-5000 MHz Silicon Germanium
Cascadable HBT MMIC Amplifier
Product Features
•
Available in Lead Free, RoHS Compliant
•
•
•
•
•
•
green package ( Z Suffix )
50 Ohm Cascadable Gain Block
High Gain: 25 dB typ. at 850 MHz
High Output IP3: 25 dBm typ. at 1950 MHz
Low Noise Figure: 2.5 dB typ. at 1950 MHz
Low Current Draw: 35mA typ.
Single Voltage Supply Operation
0
16
ORL
8
-20
Return Loss (dB)
24
-10
Gain (dB)
-30
T
LEAD
=+25ºC
0
0
1
2
3
4
5
-40
Frequenc y (G H z)
Applications
•
PA Driver Amplifier
•
Cellular, PCS, GSM, UMTS
•
IF Amplifier
•
Wireless Data, Satellite
Min.
22.5
18.0
Typ.
25.0
20.0
18.5
13.0
12.5
24.5
25.0
5000
1950
1950
1950
3.0
31
9.5
14.0
11.0
20.0
2.5
3.25
35
97
T
LEAD
= 25ºC
Z
S
= Z
L
= 50 Ohms
Symbol
G
Parameter
Small Signal Gain
Freq. (MHz )
850
1950
2400
850
1950
850
1950
Max.
27.5
22.0
Units
dB
P
1dB
OIP
3
Bandwidth
Output Power at 1dB Compression
Output Third Order Intercept Point
(Tone Spacing = 1 MHz, Pout per tone = -5 dBm )
11.0
23.0
dB m
dB m
MHz
dB
dB
3.5
3.5
39
dB
V
mA
°C/W
Determined by Return Loss (>10dB)
Input Return Loss
Output Return Loss
Noise Figure
Device Operating Voltage
Device Operating Current
Thermal Resistance (junction to lead)
Test Cond
i
tions: I
D
= 35 mA (Typ.)
IRL
ORL
NF
V
D
I
D
R
TH
, j-l
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such
information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not
authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights reserved.
303 South Technology Court
Broomfield, CO 80021
EDS-101382 Rev. E
1
Phone: (800) SMI-MMIC
http://www.sirenza.com
SIRENZA [ SIRENZA MICRODEVICES ]
