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SGA-4286Z 参数 Datasheet PDF下载

SGA-4286Z图片预览
型号: SGA-4286Z
PDF下载: 下载PDF文件 查看货源
内容描述: DC -5000兆赫,可级联的SiGe HBT MMIC放大器 [DC-5000 MHz, Cascadable SiGe HBT MMIC Amplifier]
分类和应用: 放大器射频微波
文件页数/大小: 4 页 / 88 K
品牌: SIRENZA [ SIRENZA MICRODEVICES ]
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Product Description
The SGA-4286 is a high performance SiGe HBT MMIC Amplifier. A
Darlington configuration featuring 1 micron emitters provides high
FT and excellent thermal perfomance. The heterojunction in-
creases breakdown voltage and minimizes leakage current be-
tween junctions. Cancellation of emitter junction non-linearities
results in higher suppression of intermodulation products. Only
2 DC-blocking capacitors, a bias resistor and an optional RF
choke are required for operation.
SGA-4286
SGA-4286Z
Pb
RoHS Compliant
&
Green
Package
DC-5000 MHz, Cascadable
SiGe HBT MMIC Amplifier
The matte tin finish on Sirenza’s lead-free package utilizes a post
annealing process to mitigate tin whisker formation and is RoHS
Product Features
compliant per EU Directive 2002/95. This package is also manu-
•Now available in Lead Free, RoHS
factured with green molding compounds that contain no antimony
Compliant, & Green Packaging
trioxide nor halogenated fire retardants.
Gain & Return Loss vs. Frequency
• Broadband Operation: DC-5000 MHz
• Cascadable 50 Ohm
• Operates From Single Supply
• Low Thermal Resistance Package
16
12
Gain (dB)
8
4
0
0
1
IRL
V
D
= 3.2 V, I
D
= 45 mA (Typ.)
0
-10
-20
Return Loss (dB)
GAIN
Applications
• PA Driver Amplifier
• Cellular, PCS, GSM, UMTS
• IF Amplifier
• Wireless Data, Satellite
ORL
-30
-40
2
3
Frequency (GHz)
4
5
Symbol
G
Parameter
Small Signal Gain
Units
dB
Frequency
850 MHz
1950 MHz
2400 MHz
850 MHz
1950 MHz
850 MHz
1950 MHz
Min.
12.0
Typ.
13.5
12.0
11.1
15.0
13.0
29.1
26.5
5000
Max.
15.0
P
1dB
OIP
3
Output Pow er at 1dB Compression
Output Third Order Intercept Point
dBm
dBm
MHz
dB
dB
dB
V
mA
°C/W
Bandw idth
Determined by Return Loss (>10dB)
IRL
ORL
NF
V
D
I
D
R
TH
, j-l
Input Return Loss
Output Return Loss
Noise Figure
Device Operating Voltage
Device Operating Current
Thermal Resistance (junction to lead)
V
S
= 8 V
R
BIAS
= 110 Ohms
1950 MHz
1950 MHz
1950 MHz
2.9
41
26.6
22.9
3.7
3.2
45
97
3.5
49
Test Conditions:
I
D
= 45 mA Typ.
T
L
= 25ºC
OIP
3
Tone Spacing = 1 MHz, Pout per tone = -5 dBm
Z
S
= Z
L
= 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-100639 Rev. E