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SGA-6389Z 参数 Datasheet PDF下载

SGA-6389Z图片预览
型号: SGA-6389Z
PDF下载: 下载PDF文件 查看货源
内容描述: DC -4500兆赫,可级联的SiGe HBT MMIC放大器 [DC-4500 MHz, Cascadable SiGe HBT MMIC Amplifier]
分类和应用: 放大器射频微波
文件页数/大小: 4 页 / 93 K
品牌: SIRENZA [ SIRENZA MICRODEVICES ]
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Product Description
The SGA-6389 is a high performance SiGe HBT MMIC Amplifier.
A Darlington configuration featuring 1 micron emitters provides
high F
T
and excellent thermal perfomance. The heterojunction
increases breakdown voltage and minimizes leakage current
between junctions. Cancellation of emitter junction non-
linearities results in higher suppression of intermodulation
products. Only 2 DC-blocking capacitors, a bias resistor and
an optional RF choke are required for operation.
The matte tin finish on Sirenza’s lead-free package utilizes a
post annealing process to mitigate tin whisker formation and is
RoHS compliant per EU Directive 2002/95. This package is
also manufactured with green molding compounds that contain
SGA-6389
SGA-6389Z
Pb
RoHS Compliant
&
Green
Package
DC-4500 MHz, Cascadable
SiGe HBT MMIC Amplifier
Product Features
Now available in Lead Free, RoHS
Compliant, & Green Packaging
Broadband Operation: DC-4500 MHz
• Cascadable 50ohm
Gain & Return Loss vs. Frequency
V
D
= 4.0 V, I
D
= 75 mA (Typ.)
20
GAIN
0
-10
ORL
IRL
• Patented SiGe Technology
Return Loss (dB)
15
Gain (dB)
10
5
0
0
1
2
3
Frequency (GHz)
4
5
• Operates From Single Supply
• Low Thermal Resistance Package
-20
-30
-40
Applications
PA Driver Amplifier
• Cellular, PCS, GSM, UMTS
• IF Amplifier
• Wireless Data, Satellite
Units
dB
Frequency
850 MHz
1950 MHz
2400 MHz
850 MHz
1950 MHz
850 MHz
1950 MHz
Min.
14.1
Typ.
15.5
14.0
13.3
20.2
18.9
35.2
32.6
4500
1950 MHz
1950 MHz
1950 MHz
4.6
72
16.0
11.9
4.2
4.9
80
97
5.4
88
Max.
17.3
Symbol
G
Parameter
Small Signal Gain
P
1dB
OIP
3
Output Pow er at 1dB Compression
Output Third Order Intercept Point
dBm
dBm
MHz
dB
dB
dB
V
mA
°C/W
Bandw idth
Determined by Return Loss (>10dB)
IRL
ORL
NF
V
D
I
D
R
TH
, j-l
Input Return Loss
Output Return Loss
Noise Figure
Device Operating Voltage
Device Operating Current
Thermal Resistance (junction to lead)
V
S
= 8v
R
BIAS
= 39 ohms
I
D
= 80mA Typ.
T
L
= 25ºC
Test Conditions:
OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm
Z
S
= Z
L
= 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all
such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-100620 Rev. G