Product Description
The SGA-6586 is a high performance SiGe HBT MMIC
Amplifier. A Darlington configuration featuring 1 micron
emitters provides high F T and excellent thermal
perfomance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions.
Cancellation of emitter junction non-linearities results in
higher suppression of intermodulation products. Only 2
DC-blocking capacitors, a bias resistor and an optional
RF choke are required for operation.
The matte tin finish on Sirenza’s lead-free package uti-
lizes a post annealing process to mitigate tin whisker
formation and is RoHS compliant per EU Directive 2002/
95. This package is also manufactured with green mold-
ing compounds that contain no antimony trioxide nor ha-
logenated fire retardants.
Gain & Return Loss vs. Freq. @T
L
=+25°C
GAIN
SGA-6586
SGA-6586Z
Pb
RoHS Compliant
&
Green
Package
DC-4000 MHz, Cascadable
SiGe HBT MMIC Amplifier
Product Features
• Now available in Lead Free, RoHS
Compliant, & Green Packaging
• High Gain : 18.4 dB at 1950 MHz
• Cascadable 50 Ohm
• Operates From Single Supply
• Low Thermal Resistance Package
32
0
24
-10
IRL
ORL
Return Loss (dB)
Gain (dB)
Applications
•
•
•
•
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
16
-20
8
0
0
1
2
3
Frequency (GHz)
4
5
-30
-40
Symbol
G
Parameter
Small Si gnal Gai n
U nits
dB
dB
dB
dB m
dB m
dB m
dB m
MHz
dB
dB
dB
V
mA
°C /W
Frequency
850 MHz
1950 MHz
2400 MHz
850 MHz
1950 MHz
850 MHz
1950 MHz
Min.
Typ.
23.8
18.4
16.7
21.5
19.0
33.8
32.2
2500
Max.
P
1dB
OIP
3
Output Power at 1dB C ompressi on
Output Thi rd Order Intercept Poi nt
Bandwi dth
D etermi ned by Return Loss (>10dB)
IRL
ORL
NF
V
D
I
D
R
TH
, j-l
Input Return Loss
Output Return Loss
Noi se Fi gure
D evi ce Operati ng Voltage
D evi ce Operati ng C urrent
Thermal Resi stance (juncti on to lead)
V
S
= 8 V
R
BIAS
= 39 Ohms
1950 MHz
1950 MHz
1950 MHz
4.5
72
21.4
18.0
3.1
4.9
80
97
5.3
88
Test Conditions:
I
D
= 80 mA Typ.
T
L
= 25ºC
OIP
3
Tone Spacing = 1 MHz, Pout per tone = -5 dBm
Z
S
= Z
L
= 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-101160 Rev. D
SIRENZA [ SIRENZA MICRODEVICES ]
