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SGA-6589 参数 Datasheet PDF下载

SGA-6589图片预览
型号: SGA-6589
PDF下载: 下载PDF文件 查看货源
内容描述: DC -3500兆赫,可级联的SiGe HBT MMIC放大器 [DC-3500 MHz, Cascadable SiGe HBT MMIC Amplifier]
分类和应用: 放大器射频微波
文件页数/大小: 4 页 / 90 K
品牌: SIRENZA [ SIRENZA MICRODEVICES ]
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Product Description
The SGA-6589 is a high performance SiGe HBT MMIC
Amplifier. A Darlington configuration featuring 1 micron
emitters provides high F
T
and excellent thermal
perfomance. The heterojunction increases breakdown
voltage and minimizes leakage current between junc-
tions. Cancellation of emitter junction non-linearities
results in higher suppression of intermodulation prod-
ucts. Only 2 DC-blocking capacitors, a bias resistor and
an optional RF choke are required for operation.
The matte tin finish on Sirenza’s lead-free package uti-
lizes a post annealing process to mitigate tin whisker
formation and is RoHS compliant per EU Directive 2002/
95. This package is also manufactured with green mold-
ing compounds that contain no antimony trioxide nor
halogenated fire retardants.
Gain & Return Loss vs. Frequency
V
D
= 4.9 V, I
D
= 80 mA (Typ.)
32
GAIN
IRL
ORL
SGA-6589
SGA-6589Z
Pb
RoHS Compliant
&
Green
Package
DC-3500 MHz, Cascadable
SiGe HBT MMIC Amplifier
Product Features
• Now available in Lead Free, RoHS
Compliant, & Green Packaging
• High Gain : 20 dB at 1950 MHz
• Cascadable 50 Ohm
• Operates From Single Supply
• Low Thermal Resistance Package
0
Return Loss (dB)
24
Gain (dB)
-10
16
-20
Applications
PA Driver Amplifier
8
-30
0
0
1
2
3
Frequency (GHz)
4
5
-40
• Cellular, PCS, GSM, UMTS
• IF Amplifier
• Wireless Data, Satellite
U nits
dB
Frequency
850 MHz
1950 MHz
2400 MHz
850 MHz
1950 MHz
850 MHz
1950 MHz
Min.
23.0
Typ.
25.5
20.0
18.2
21.5
19.0
32.5
32.0
4000
1950 MHz
1950 MHz
1950 MHz
4.5
72
13.1
9.2
3.0
4.9
80
97
5.3
88
Max.
28.1
S ymbol
G
P arameter
S mall S i gnal Gai n
P
1dB
OIP
3
B andwi dth
Output P ower at 1dB C ompressi on
Output Thi rd Order Intercept P oi nt
D etermi ned by Return Loss (>9dB )
Input Return Loss
Output Return Loss
Noi se Fi gure
D evi ce Operati ng Voltage
D evi ce Operati ng C urrent
Thermal Resi stance (juncti on to lead)
V
S
= 8 V
R
BIAS
= 39 Ohms
I
D
= 75 mA Typ.
T
L
= 25ºC
dB m
dB m
MHz
dB
dB
dB
V
mA
°C /W
IRL
ORL
NF
V
D
I
D
R
TH
, j-l
Test Conditions:
OIP
3
Tone Spacing = 1 MHz, Pout per tone = 0 dBm
Z
S
= Z
L
= 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-101268 Rev. D