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SGA-7489 参数 Datasheet PDF下载

SGA-7489图片预览
型号: SGA-7489
PDF下载: 下载PDF文件 查看货源
内容描述: DC -3000 MHz的硅锗HBT可级联增益模块 [DC-3000 MHz Silicon Germanium HBT Cascadeable Gain Block]
分类和应用: 射频微波
文件页数/大小: 6 页 / 654 K
品牌: SIRENZA [ SIRENZA MICRODEVICES ]
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Product Description
SGA-7489
Sirenza Microdevices’ SGA-7489 is a high performance SiGe
heterojunction bipolar transistor MMIC amplifier. A Darlington
configuration featuring 1 micron emitters provides high F
T
and
excellent thermal performance. The heterojunction increases
breakdown voltage and minimizes leakage current between
junctions. Cancellation of emitter junction non-linearities results
in higher suppression of intermodulation products.
Basic circuit operation is achieved with just a single supply
voltage, DC blocking and bypass capacitors, a bias resistor,
and a bias inductor. Simple capacitive tuning may be used to
extend high OIP3 performance to 2GHz.
Gain, Return Loss, and Isolation vs. Frequency
30
25
20
V
D
=5.0V, I
D
=115mA (Typ), T
LEAD
=+25C
0
DC-3000 MHz Silicon Germanium
HBT Cascadeable Gain Block
Product Features
•
DC-3000 MHz Operation
•
Very High IF Output IP3: 39dBm at 100MHz
•
High Output IP3: +35.5 dBm typ. at 850 MHz
•
Low Noise Figure: 3.3 dB typ. at 1950 MHz
Applications
•
Oscillator Amplifiers
•
PA for Low / Medium Power Applications
•
IF/ RF Buffer Amplifier
•
Drivers for CATV Amplifiers
•
LO Driver Amplifier
Min.
18.5
Ty p.
22.4
20.0
39.0
35.5
33.0
36.0 *
21.5
18.5
3000
1950
1950
1950
1950
4.7
103
10.3
9.0
15.0
11.0
23.0
3.3
5.0
115
82
4.3
5.3
127
o
Gain
Gain (dB)
Input Return
Loss
-10
15
10
5
Isolation
Output
Return Loss
-15
-20
-25
0
0
500
1000
1500
2000
2500
-30
3000
Frequency (MHz)
Sy mbol
P
1dB
Parameter
Output Pow er at 1dB Compression
Return Loss & Isolation (dB)
-5
Freq. (MHz)
850
1950
100
850
1950
1950 *
850
1950
Max.
Units
dBm
OIP
3
Output Third Order Intercept Point
* Using 2 GHz App.Ckt. (see page 5)
31.0
20.0
17.0
dBm
S
21
Bandw idth
IRL
ORL
S
12
NF
V
D
I
D
R
TH
, j-l
Small Signal Gain
Determined by Return Loss (>9dB)
Input Return Loss
Output Return Loss
Reverse Isolation
Noise Figure, Z
S
= 50 Ohms
Device Operating Voltage
Device Operating Current
Thermal Resistance (junction - lead)
23.0
20.0
dB
M Hz
dB
dB
dB
dB
V
mA
C/W
Test Conditions:
V
S
= 8 V
I
D
= 115 mA Typ.
Bias Resistance = 26 Ohms
OIP
3
Tone Spacing = 1 MHz, Pout per tone = 0 dBm
T
L
= 25ºC
Z
S
= Z
L
= 50 Ohms
NOTE: The recommended operating current in the preliminary datasheet was 130mA. Supplemental measurements have
since shown that an operating current of 115mA results in optimal RF performance over temperature. Continued operation
at 130mA is reliable, however, the recommended operating current has been changed to 115mA.
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of
this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are
implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc..
All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-101801 Rev C