Product Description
The SGA-7489 is a high performance SiGe HBT
MMIC Amplifier. A Darlington configuration featuring
1 micron emitters provides high FT and excellent
thermal perfomance. The heterojunction increases
breakdown voltage and minimizes leakage current
between junctions. Cancellation of emitter junction
non-linearities results in higher suppression of
intermodulation products. Only 2 DC-blocking ca-
pacitors, a bias resistor and an optional RF choke
are required for operation.
The matte tin finish on Sirenza’s lead-free package
utilizes a post annealing process to mitigate tin whis-
ker formation and is RoHS compliant per EU Direc-
tive 2002/95. This package is also manufactured
with green molding compounds that contain no an-
timony trioxide nor halogenated fire retardants.
Gain, Return Loss, and Isolation vs. Frequency
30
25
20
Gain (dB)
15
10
5
Isolation
Output
Return Loss
SGA-7489
SGA-7489Z
Pb
RoHS Compliant
&
Green
Package
DC-3000 MHz Silicon Germanium
HBT Cascadeable Gain Block
Product Features
•
Now available in Lead Free, RoHS
Compliant, & Green Packaging
•
DC-3000 MHz Operation
• Very High IF Output IP3: 39dBm at 100MHz
• High Output IP3: +35.5 dBm typ. at 850 MHz
• Low Noise Figure: 3.3 dB typ. at 1950 MHz
Return Loss & Isolation (dB)
V
D
=5.0V, I
D
=115mA (Typ), T
LEAD
=+25C
0
Gain
-5
Input Return
Loss
-10
-15
Applications
•
Oscillator Amplifiers
• PA for Low / Medium Power Applications
• IF/ RF Buffer Amplifier
• Drivers for CATV Amplifiers
• LO Driver Amplifier
Freq. (MHz)
850
1950
100
850
1950
1950 *
850
1950
Min.
18.5
Typ.
22.4
20.0
39.0
35.5
33.0
36.0 *
21.5
18.5
3000
1950
1950
1950
1950
4.7
103
10.3
9.0
15.0
11.0
23.0
3.3
5.0
115
82
4.3
5.3
127
o
-20
-25
0
0
500
1000
1500
2000
2500
-30
3000
Frequency (MHz)
Symbol
P
1dB
Parameter
Output Pow er at 1dB Compression
Max.
Units
dBm
OIP
3
Output Third Order Intercept Point
* Using 2 GHz App.Ckt. (see page 5)
31.0
20.0
17.0
dBm
S
21
Bandw idth
IRL
ORL
S
12
NF
V
D
I
D
R
TH
, j-l
Small Signal Gain
Determined by Return Loss (>9dB)
Input Return Loss
Output Return Loss
Reverse Isolation
Noise Figure, Z
S
= 50 Ohms
Device Operating Voltage
Device Operating Current
Thermal Resistance (junction - lead)
23.0
20.0
dB
MHz
dB
dB
dB
dB
V
mA
C/W
Test Conditions:
V
S
= 8 V
I
D
= 115 mA Typ.
Bias Resistance = 26 Ohms
OIP
3
Tone Spacing = 1 MHz, Pout per tone = 0 dBm
T
L
= 25ºC
Z
S
= Z
L
= 50 Ohms
NOTE: The recommended operating current in the preliminary datasheet was 130mA. Supplemental measurements have since shown
that an operating current of 115mA results in optimal RF performance over temperature. Continued operation at 130mA is reliable,
however, the recommended operating current has been changed to 115mA.
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-101801 Rev D
SIRENZA [ SIRENZA MICRODEVICES ]
