Product Description
Sirenza Microdevices’ SGA-9189 is a high performance transistor designed
for operation to 3 GHz. With optimal matching at 2 GHz, OIP3=39 dBm and
P1dB=25.5 dBm. This RF device is based on a Silicon Germanium
Heterostructure Bipolar Transistor (SiGe HBT) process. The SGA-9189 is
cost-effective for applications requiring high linearity even at moderate
biasing levels. It is well suited for operation at both 5V and 3V.
The matte tin finish on Sirenza’s lead-free package utilizes a post annealing
process to mitigate tin whisker formation and is RoHS compliant per EU Directive
2002/95. This package is also manufactured with green molding compounds
that contain no antimony trioxide nor halogenated fire retardants.
SGA-9189
SGA-9189Z
Pb
RoHS Compliant
&
Green
Package
Medium Power Discrete SiGe Transistor
Product Features
Typical Gmax, OIP3, P1dB @ 5V,180mA
25
23
21
19
17
15
13
11
9
7
5
Gmax
OIP3, P1dB (dBm)
OIP3
P1dB
44
42
40
38
36
34
32
30
28
26
24
Gmax (dB)
•
•
•
•
•
•
•
•
Available in RoHS compliant Green packaging
50-3000 MHz Operation
39 dBm Ouput IP3 Typical at 1.96 GHz
12.2 dB Gain Typical at 1.96 GHz
25.5 dBm P1dB Typical at 1.96 GHz
2.1 dB NF Typical at 0.9 GHz
Cost Effective
3-5 V Operation
Applications
•
•
•
•
Wireless Infrastructure Driver Amplifiers
CATV Amplifiers
Wireless Data, WLL Amplifiers
AN-021 contains detailed application circuits
0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5
Frequency (GHz)
Symbol
D evice C haracteristics, T = 25ºC
V
CE
= 5V, I
CQ
=180mA (unless otherw ise noted)
Maxi mum Avai lable Gai n
Z
S
=Z
S
*, Z
L
=Z
L
*
Power Gai n
Z
S
=Z
SOPT
, Z
L
=Z
LOPT
Output 1dB C ompressi on Poi nt
Z
S
=Z
SOPT
, Z
L
=Z
LOPT
Output Thi rd Order Intercept Poi nt
Z
S
=Z
SOPT
, Z
L
=Z
LOPT
, P
OUT
= +10 dBm per tone
Noi se Fi gure
Z
S
=Z
SOPT
, Z
L
=Z
LOPT
C ollector - Emi tter Breakdown Voltage
D C current gai n
Thermal Resi stance (juncti on-to-lead)
Operati ng Voltage (collector-to-emi tter)
Operati ng C urrent
Test Frequency
[1] 100% Tested
[2] Sample Tested
f = 900 MHz
f = 1960 MHz
f = 900 MHz [1]
f = 1960 MHz [2]
f = 900 MHz
f = 1960 MHz [2]
f = 900 MHz
f = 1960 MHz [2]
f = 900 MHz
f = 1960 MHz
U nits
Min.
Typ.
20.5
13.2
Max.
G
MAX
G
P 1dB
OIP
3
NF
B V
C EO
h
FE
Rth
V
CE
I
dB
dB
dB m
dB m
dB
V
7.5
100
ºC /W
V
mA
155
17.5
11.2
23.5
36.5
19.0
12.2
25.8
25.5
40.0
39.0
2.1
2.6
8.5
180
47
20.5
13.2
300
5.5
180
195
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-101497 Rev H
SIRENZA [ SIRENZA MICRODEVICES ]
