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SGA-9289 参数 Datasheet PDF下载

SGA-9289图片预览
型号: SGA-9289
PDF下载: 下载PDF文件 查看货源
内容描述: 中功率分立SiGe半导体晶体管 [Medium Power Discrete SiGe Transistor]
分类和应用: 晶体半导体晶体管射频微波
文件页数/大小: 4 页 / 100 K
品牌: SIRENZA [ SIRENZA MICRODEVICES ]
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Preliminary
Product Description
Sirenza Microdevices’ SGA-9289 is a high performance transistor
designed for operation to 3 GHz. With optimal matching at 2 GHz,
OIP3=42.5 dBm and P1dB=27.5 dBm. This RF device is based on
a Silicon Germanium Heterostructure Bipolar Transistor (SiGe
HBT) process. The SGA-9289 is cost-effective for applications
requiring high linearity even at moderate biasing levels. It is well
suited for operation at both 5V and 3V.
The matte tin finish on Sirenza’s lead-free package utilizes a post
annealing process to mitigate tin whisker formation and is RoHS
compliant per EU Directive 2002/95. This package is also
manufactured with green molding compounds that contain no
antimony trioxide nor halogenated fire retardants.
SGA-9289
SGA-9289Z
Pb
RoHS Compliant
&
Green
Package
Medium Power Discrete SiGe Transistor
Product Features
Available in RoHS compliant Green packaging
50-3000 MHz Operation
42.5 dBm Ouput IP3 Typical at 1.96 GHz
12.0 dB Gain Typical at 1.96 GHz
27.5 dBm P1dB Typical at 1.96 GHz
2.4 dB NF Typical at 0.9 GHz
Cost Effective
3-5 V Operation
Typical Gmax, OIP3, P1dB @ 5V,270mA
25
23
21
19
44
OIP3
42
38
36
17
15
13
11
9
7
5
0.9
1.1
1.3
1.5
1.7
1.9
2.1
2.3
2.5
Gmax
OIP3, P1dB (dBm)
40
Gmax (dB)
34
32
30
28
26
24
Applications
Wireless Infrastructure Driver Amplifiers
CATV Amplifiers
Wireless Data, WLL Amplifiers
AN-022 contains detailed application circuits
P1dB
Frequency (GHz)
Symbol
Test Frequency
Device Characteristics, T = 25ºC
[1] 100% Tested
V
CE
= 5V, I
CQ
=280mA (unless otherw ise noted)
[2] Sample Tested
Maximum Available Gain
Z
S
=Z
S
*, Z
L
=Z
L
*
Power Gain
Z
S
=Z
SOPT
, Z
L
=Z
LOPT
Output 1dB Compression Point
Z
S
=Z
SOPT
, Z
L
=Z
LOPT
Output Third Order Intercept Point
Z
S
=Z
SOPT
, Z
L
=Z
LOPT
, P
OUT
= +13 dBm per tone
Noise Figure
Z
S
=Z
SOPT
, Z
L
=Z
LOPT
Collector - Emitter Breakdown Voltage
DC current gain
Thermal Resistance (junction-to-lead)
Operating Voltage (collector-to-emitter)
Operating Current
f = 900 MHz
f = 1960 MHz
f = 900 MHz [1]
f = 1960 MHz [2]
f = 900 MHz
f = 1960 MHz [2]
f = 900 MHz
f = 1960 MHz [2]
f = 900 MHz
f = 1960 MHz
Units
Min.
Typ.
20.5
13.1
Max.
G
MAX
G
P 1dB
OIP
3
NF
B V
C EO
h
FE
Rth
V
CE
I
dB
dB
dB m
dB m
dB
V
7.5
100
ºC/W
V
mA
250
16.2
11.0
26.0
40.0
17.7
12.0
28.0
27.5
42.0
42.5
2.4
2.5
8.5
180
32
19.2
13.0
300
5.5
280
320
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility
for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the
circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems.
Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights reserved.
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-101498 Rev G