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SGB-4333Z 参数 Datasheet PDF下载

SGB-4333Z图片预览
型号: SGB-4333Z
PDF下载: 下载PDF文件 查看货源
内容描述: DC - 3 GHz有源偏置增益模块 [DC - 3 GHz Active Bias Gain Block]
分类和应用: 射频微波
文件页数/大小: 6 页 / 124 K
品牌: SIRENZA [ SIRENZA MICRODEVICES ]
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Product Description
Sirenza Microdevices’ SGB-4333 is a high performance SiGe HBT
MMIC amplifier utilizing a Darlington configuration with an active bias
network. The active bias network provides stable current over tempera-
ture and process Beta variations. Designed to run directly from a 3V to
5V supply the SGB-4333 does not require a drop resistor as compared
to typical Darlington amplifiers. This robust amplifier features a Class
1C ESD rating, low thermal resistance , and unconditional stability. The
SGB-4333 product is designed for high linearity 3V gain block applica-
tions that require small size and minimal external components. It is on
chip matched to 50 ohm and an external bias inductor choke is required
for the application band.
This product is available in a RoHS Compliant and Green package with
matte tin finish, designated by the “Z” package suffix.
SGB-4333
SGB-4333Z
Pb
RoHS Compliant
&
Green
Package
DC – 3 GHz Active Bias Gain Block
Product Features
Functional Block Diagram
Vbias
VCC
NC
NC
Active
Bias
Available in Lead Free, RoHS compliant, &
Green Packaging
High reliability SiGe HBT Technology
Robust Class 1C ESD
Simple and small size
P1dB = 10.0dBm @ 1950MHz
IP3 = 22.5 dBm @ 1950MHz
Low Thermal Resistance = 76 C/W
NC
NC
NC
NC
RFOUT
RFIN
NC
NC
Applications
3V Battery operated applications
LO buffer amp
RF pre-driver and RF receive path
GND
NC
NC
NC
Key Specifications
Symbol
f
O
S
21
Parameters: Test Conditions
Z
0
= 50Ω, V
CC
= 3.0V, Ic = 56mA, T = 30ºC)
Frequency of Operation
Small Signal Gain – 850MHz
Small Signal Gain – 1950MHz
Small Signal Gain – 2400MHz
Output Power at 1dB Compression – 850MHz
P
1dB
Output Power at 1dB Compression – 1950MHz
Output Power at 1dB Compression – 2400MHz
Output IP3 – 850MHz
OIP3
Output IP3 – 1950MHz
Output IP3 – 2400MHz
IRL
ORL
Ic
NF
R
th, j-l
Input Return Loss @ 1950MHz
Output Return Loss @1950MHz
Current
Noise Figure @1950MHz
Thermal Resistance (junction - lead)
dB
dB
mA
dB
ºC/W
8.5
8.5
48
dB
20.0
dBm
8.5
dB
13.0
Unit
MHz
Min.
DC
17.5
14.5
14.0
11.5
10.0
9.5
25.0
22.5
21.0
10.5
10.5
56
4.0
76
62
5.0
16.0
Typ.
Max.
3000
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the
circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems.
Copyright 2006 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 South Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-103087 Rev G