欢迎访问ic37.com |
会员登录 免费注册
发布采购

SGC-4386Z 参数 Datasheet PDF下载

SGC-4386Z图片预览
型号: SGC-4386Z
PDF下载: 下载PDF文件 查看货源
内容描述: 50-4000 MHz的有源偏置硅锗级联增益模块 [50-4000 MHz Active Bias Silicon Germanium Cascadable Gain Block]
分类和应用: 射频微波
文件页数/大小: 5 页 / 256 K
品牌: SIRENZA [ SIRENZA MICRODEVICES ]
 浏览型号SGC-4386Z的Datasheet PDF文件第2页浏览型号SGC-4386Z的Datasheet PDF文件第3页浏览型号SGC-4386Z的Datasheet PDF文件第4页浏览型号SGC-4386Z的Datasheet PDF文件第5页  
SGC-4386Z
Product Description
Sirenza Microdevices’ SGC-4386Z is a high performance SiGe HBT MMIC
amplifier utilizing a Darlington configuration with a patented active bias
network. The active bias network provides stable current over temperature
and process Beta variations. Designed to run directly from a 3V supply, the
SGC-4386Z does not require a dropping resistor as compared to typical
Darlington amplifiers. The SGC-4386Z is designed for high linearity 3V gain
block applications that require small size and minimal external components.
It is internally matched to 50 ohms.
50-4000 MHz Active Bias Silicon
Germanium Cascadable Gain Block
Pb
RoHS Compliant
&
Green
Package
Gain & Return Loss
30
S21
20
V
D
= 3V, I
D
= 54mA
Gain, RL (dB)
10
0
-10
-20
-30
0
0.5
1
1.5
2
2.5
3
3.5
4
Bias Tee Data, Z
S
= Z
L
= 50 Ohms, T
L
= 25C
S22
S11
Product Features
Single Fixed 3V Supply
No Dropping Resistor Required
Patented Self-Bias Circuitry
P1dB = 12.7 dBm at 1950 MHz
OIP3 = 27 dBm at 1950 MHz
Robust 1000V ESD, Class 1C HBM
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS, WCDMA
IF Amplifier
Wireless Data, Satellite
Frequency
850 MHz
1950 MHz
2400 MHz
850 MHz
1950 MHz
2400 MHz
850 MHz
1950 MHz
2400 MHz
1950 MHz
1950 MHz
1930 MHz
Min.
15.2
11.2
Typ.
16.7
12.7
10.9
13.4
12.7
11.8
29.5
27.0
26.0
15.0
13.5
3.7
3
48
54
145
OIP
3
Tone Spacing = 1MHz
Pout per tone = -5 dBm
Frequency (GHz)
Symbol
G
Parameters
Small Signal Gain
Units
dB
Max.
18.2
14.2
P
1dB
Output Power at 1dB Compression
dBm
11.7
OIP
3
IRL
ORL
NF
V
D
I
D
Rth, j-l
Output Third Order Intercept Point
Input Return Loss
Output Return Loss
Noise Figure
Device Operating Voltage
Device Operating Current
Thermal Resistance (junction to lead)
V
D
= 3.0V
Bias Tee Data
I
D
= 54mA Typ.
dBm
dB
dB
dB
V
mA
°C/W
Z
S
= Z
L
= 50 Ohms
T
L
= 25°C
25.0
11
9.5
4.7
60
Test Conditions:
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-104976 Rev C