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SGL-0263 参数 Datasheet PDF下载

SGL-0263图片预览
型号: SGL-0263
PDF下载: 下载PDF文件 查看货源
内容描述: 1400至2500年兆赫硅锗级联低噪声放大器 [1400 - 2500 MHz Silicon Germanium Cascadable Low Noise Amplifier]
分类和应用: 放大器射频微波
文件页数/大小: 5 页 / 185 K
品牌: SIRENZA [ SIRENZA MICRODEVICES ]
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Product Description
The SGL-0263 is a high performance SiGe HBT MMIC low noise am-
plifier featuring 1 micron emitters with F
T
up to 50 GHz. This device
has an internal temperature compensation circuit permitting opera-
tion directly from supply voltages as low as 2.5V. The SGL-0263 has
been characterized at Vd = 3V for low power and 4V for medium
power applications. Only 2 DC-blocking capacitors, 2 input matching
components, a bias resistor, and an optional RF choke are required
for operation from 1400-2500 MHz.
The matte tin finish on Sirenza’s lead-free “Z” package is applied
using a post annealing process to mitigate tin whisker formation
and is RoHS compliant per EU Directive 2002/95. The package
body is manufactured with green molding compounds that contain
no antimony trioxide or halogenated fire retardants.
SGL-0263
SGL-0263Z
Pb
RoHS Compliant
&
Green
Package
1400 - 2500 MHz Silicon Germanium
Cascadable Low Noise Amplifier
Product Features
Available in Lead Free, RoHS Compliant
green package ( Z Suffix )
High Input / Output Intercept
Low Noise Figure: 1.3dB typ. at 1900 MHz
Low Power Consumption
Single Voltage Supply Operation
Internal Temperature Compensation
V
S
Temperature
Compensation
Circuit
RF Out / V
S
RF In
Applications
Receivers, GPS
,
RFID
Cellular, Fixed Wireless, Land Mobile
Symbol
Parameter
Freq.
(MHz )
1900
2100
2400
1900
2100
2400
1900
2100
2400
1900
2100
2400
1900
1900
1900
Min.
(V
S
=3V)
Typ.
(V
S
=3V
)
Max.
(V
S
=3V)
Typ.
(V
S
=4V)
Units
12.1
G
Small Signal Gain
13.4
12.5
10.8
5.5
6.8
7.9
9.5
13.5
15.5
1.3
1.5
2.0
14.7
13.8
12.9
11.3
11.4
12.3
12.8
15.1
16.8
18.4
dB
3.5
P
1dB
Output Power at 1dB Compression
Input Third Order Intercept Point
dB m
7.5
IIP
3
Tone Spacing = 1 MHz
Pout per tone = -13dBm
dB m
1.7
NF
IRL
ORL
|S
12
|
I
D
R
TH
,j-l
Noise Figure, Z
S
= 50 Ohms
Input Return Loss
Output Return Loss
Reverse Isolation
Device Current
Thermal Resistance (junction to lead)
1.9
2.1
2.8
21.9
17.4
21.0
dB
dB
dB
dB
mA
o
10.0
10.0
13.3
12.9
20.7
9.0
12.5
255
15
23
C/W
Test Conditions:
14
00-
25
00
MHz
Application Circuit T
LEAD
= 25ºC
Z
0
=
Z
L
= 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such
information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not
authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights reserved.
303 South Technology Court
Broomfield, CO 80021
EDS-101502 Rev C
1
Phone: (800) SMI-MMIC
http://www.sirenza.com