Product Description
Sirenza Microdevices’ SHF-0589 is a high performance AlGaAs/
GaAs Heterostructure FET (HFET) housed in a low-cost sur-
face-mount plastic package. The HFET technology improves
breakdown voltage while minimizing Schottky leakage current
resulting in higher PAE and improved linearity.
Output power at 1dB compression is +33.4 dBm when biased
for Class AB operation at 7V,345mA at 1.96 GHz. The +46.5
dBm third order intercept makes it ideal for high dynamic range,
high intercept point requirements. It is well suited for use in
both analog and digital wireless communication
infrastructure and subscriber equipment including 3G, cellular,
PCS, fixed wireless, and pager systems.
Typical Gain Performance (7V,345mA)
SHF-0589
0
Symbol
1
D evice C haracteristics
D
E
(unless otherw ise noted)
Test C onditions, 25C
V
DS
=7V, I
DQ
=345mA
D
Frequency (GHz)
2
3
4
5
6
FO
40
35
30
25
20
15
10
5
0
Gain, Gmax (dB)
Gmax
Gain
Applications
•
Analog and Digital Wireless Systems
•
3G, Cellular, PCS
•
Fixed Wireless, Pager Systems
R
Test
Frequency
0.90 GHz
1.96 GHz
2.14 GHz
0.90 GHz
1.96 GHz
1.96 GHz
1.96 GHz
1.96 GHz
1.96 GHz
N
E
•
High Drain Efficiency (>50% at P1dB)
W
U nits
dB
dB
dB
dB
dB m
dB m
dB m
dB m
dB
mA
mS
V
V
V
o
+33.4 dBm P1dB
+46.5 dBm OIP3
+26 dBm IS-95 Channel Power
+11.5 dB Gain
•
+23.7 dBm W-CDMA Channel Power
D
E
Min
-
-
-
14.1
10.3
44
31.9
-
-
816
576
-3.0
-
-
-
-
-
-
3.7
-17
-22
23
-
-
-
S
Typ
22.9
17.4
16.6
15.7
11.5
46.5
33.4
26.2
Max
-
-
-
17.3
12.7
-
-
-
-
1536
1008
-1.0
-15
-17
-
8.0
480
2.4
1176
792
-1.9
Product Features
•
High Linearity Performance at 1.96 GHz
Gmax
S
21
Gai n
OIP3
P 1dB
P
CHAN
NF
I
DSS
g
m
V
P
Maxi mum Avai lable Gai n
Inserti on Gai n
Power Gai n
[1]
M
M
E
[2]
Output Thi rd Order Intercept Poi nt
Output 1dB C ompressi on Poi nt
[2]
IS-95 C hannel Power (-45dBc AC PR)
Saturated D rai n C urrent
Tranconductance
C
O
Noi se Fi gure
[2]
BV
GS
R
E
Pi nch-Off Voltage
[1]
[1]
Gate-Source Breakdown Voltage
[1]
BV
GD
Rth
V
DS
I
DQ
Gate-D rai n Breakdown Voltage
Thermal Resi stance
[3]
[3]
[3]
N
Z
S
=Z
S
*, Z
L
=Z
L
*
Z
S
=Z
L
= 50 Ohms
Appli cati on C i rcui t
Appli cati on C i rcui t
Appli cati on C i rcui t
Appli cati on C i rcui t
Appli cati on C i rcui t
V
DS
= V
DSP
, V
GS
= 0V
V
DS
= V
DSP
, V
GS
= -0.25V
V
DS
= 2.0V, I
DS
= 2.4mA
I
GS
= 4.8mA, drai n open
I
GD
= 4.8mA, V
GS
= -5.0V
juncti on-to-lead
drai n-source
drai n-source, qui escent
[2]
C /W
V
mA
C
N
O
T
Operati ng Voltage
Operati ng C urrent
P
DISS
Power D i ssi pati on
[1] 100% tested - Insertion gain tested using a 50 ohm contact board (no matching circuitry) during final production test.
[2] Sample tested - Samples pulled from each wafer/package lot. Sample test specifications are based on statistical data from sample test measurements. The test fixture is
an engineering application circuit board. The application circuit was designed for the optimum combination of linearity, P1dB, and VSWR.
[3] Maximum recommended power dissipation is specified to maintain T
J
<140C at T
L
=85C. V
DS
* I
DQ
< 2.4W is recommended for continuous reliable operation.
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not
authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems.
Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-101242 Rev F
1
IG
N
0.05-3 GHz, 2 Watt
GaAs HFET