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SLD-1026Z 参数 Datasheet PDF下载

SLD-1026Z图片预览
型号: SLD-1026Z
PDF下载: 下载PDF文件 查看货源
内容描述: 3瓦的离散LDMOS器件塑料表面贴装封装 [3 Watt Discrete LDMOS Device Plastic Surface Mount Package]
分类和应用:
文件页数/大小: 21 页 / 823 K
品牌: SIRENZA [ SIRENZA MICRODEVICES ]
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Preliminary
SLD-1026Z
Product Description
Sirenza Microdevices’
SLD-1026Z
is a robust 3 Watt high performance
LDMOS transistor designed for operation from 10 to 2700MHz. It is an
excellent solution for applications requiring high linearity and efficiency
at a low cost. The SLD-1026Z is typically used in the design of driver
stages for power amplifiers, repeaters, and RFID applications.The
power transistor is fabricated using Sirenza’s latest, high performance
LDMOS II process. This product features a RoHS/WEEE Compliant
package with matte tin finish, designated by the ‘Z’ suffix.
Pb
RoHS Compliant
&
Green
Package
3 Watt Discrete LDMOS Device
Plastic Surface Mount Package
Functional Schematic Diagram
ESD
Protection
Proprietary SOF-26 Package
Product Features
3 Watt Output P
1dB
Single Polarity Supply Voltage
High Gain: 19 dB at 915 MHz
High Efficiency: 44% at 3W CW
XeMOS II LDMOS
Proprietary Low Thermal Resistance Package
Integrated ESD Protection, Class 1B
Base Station PA driver
Repeaters
RFID
Military Communication
GSM / EDGE / CDMA / WCDMA
Applications
Backside Paddle = Ground
RF Specifications
Symbol
Frequency
Gain
Gain
Efficiency
Efficiency
IRL
IRL
Parameter
Frequency of Operation
3 Watt CW, 902-928 MHz
3 Watt CW, 2110-2170 MHz
Drain Efficiency at 3 Watt CW , 915MHz
Drain Efficiency at 3 Watt CW , 2140MHz
Input Return Loss, 3 Watt Output Power, 915MHz
Input Return Loss, 3 Watt Output Power, 2140 MHz
3 Order IMD at 3 Watt PEP (Two Tone), 915MHz
Linearity
3 Order IMD at 3 Watt PEP (Two Tone), 2140MHz
1dB Compression (P
1dB
), 915 MHz
1dB Compression (P
1dB
), 2140 MHz
ACP at 0.3 Watt output, 2140MHz, 10 MHz carrier separation,
3GPP2, Test model 1, 64 DPCH, 67% Clipping,
PAR= 9.3 @ 0.01% CCDF
IM3 at 0.3 Watt, 2140MHz output, 10 MHz carrier separation,
3GPP2, Test model 1, 64 DPCH, 67% Clipping,
PAR= 9.3 @ 0.01% CCDF
Thermal Resistance (Junction-to-Case)
V
DS
= 28.0V, I
DQ
= 50mA, T
Flange
= 25ºC
rd
rd
Unit
MHz
dB
dB
%
%
dB
dB
dBc
dBc
Watt
Watt
dBc
Min
10
Typ
-
19
14
44
43
-12
-12
-28
-28
3.5
3.0
-48
Max
2700
2 carrier WCDMA
performance
dBc
ºC/W
-47
17
R
TH
Test Conditions
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such
information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices
does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 S. Technology Court,
Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-104157 Rev F